Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young; A. Kerber; Tuo-Hung Hou; E. Cartier; G. A. Brown; G. Bersuker; Y. Kim; C. Lim; J. Gutt; P. Lysaght; J. Bennett; C. H. Lee; S. Gopalan; M. Gardner; P. Zeitzoff; G. Groeseneken; R. W. Murto; H. R. Huff

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young^*, A. Kerber, Tuo-Hung Hou, E. Cartier, G. A. Brown, G. Bersuker, Y. Kim, C. Lim, J. Gutt, P. Lysaght, J. Bennett, C. H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff, G. Groeseneken, R. W. Murto, H. R. Huff

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

7 Scopus citations

Abstract

Interfacial and bulk high-K properties of HfSi_xO_y (20% SiO₂) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.

Original language	English
Pages	347-359
Number of pages	13
State	Published - Oct 2003
Event	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States Duration: 12 Oct 2003 → 16 Oct 2003

Conference

Conference	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Country/Territory	United States
City	Orlando, FL.
Period	12/10/03 → 16/10/03

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Young, C. D., Kerber, A., Hou, T.-H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., Bennett, J., Lee, C. H., Gopalan, S., Gardner, M., Zeitzoff, P., Groeseneken, G., Murto, R. W., & Huff, H. R. (2003). Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 347-359. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

Young, C. D. ; Kerber, A. ; Hou, Tuo-Hung et al. / Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.13 p.

@conference{f16c2ab660a749f18eb25fdd0450c8f9,

title = "Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures",

abstract = "Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the {"}trap fee{"} mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.",

author = "Young, {C. D.} and A. Kerber and Tuo-Hung Hou and E. Cartier and Brown, {G. A.} and G. Bersuker and Y. Kim and C. Lim and J. Gutt and P. Lysaght and J. Bennett and Lee, {C. H.} and S. Gopalan and M. Gardner and P. Zeitzoff and G. Groeseneken and Murto, {R. W.} and Huff, {H. R.}",

year = "2003",

month = oct,

language = "English",

pages = "347--359",

note = "Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ; Conference date: 12-10-2003 Through 16-10-2003",

}

Young, CD, Kerber, A, Hou, T-H, Cartier, E, Brown, GA, Bersuker, G, Kim, Y, Lim, C, Gutt, J, Lysaght, P, Bennett, J, Lee, CH, Gopalan, S, Gardner, M, Zeitzoff, P, Groeseneken, G, Murto, RW & Huff, HR 2003, 'Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures', Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States, 12/10/03 - 16/10/03 pp. 347-359.

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. / Young, C. D.; Kerber, A.; Hou, Tuo-Hung et al.
2003. 347-359 Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

AU - Young, C. D.

AU - Kerber, A.

AU - Hou, Tuo-Hung

AU - Cartier, E.

AU - Brown, G. A.

AU - Bersuker, G.

AU - Kim, Y.

AU - Lim, C.

AU - Gutt, J.

AU - Lysaght, P.

AU - Bennett, J.

AU - Lee, C. H.

AU - Gopalan, S.

AU - Gardner, M.

AU - Zeitzoff, P.

AU - Groeseneken, G.

AU - Murto, R. W.

AU - Huff, H. R.

PY - 2003/10

Y1 - 2003/10

N2 - Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.

AB - Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.

UR - http://www.scopus.com/inward/record.url?scp=3042855582&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:3042855582

SP - 347

EP - 359

T2 - Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues

Y2 - 12 October 2003 through 16 October 2003

ER -

Young CD, Kerber A, Hou TH, Cartier E, Brown GA, Bersuker G et al.. Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 2003. Paper presented at Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., United States.

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

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