Charge transport in thin hafnium and zirconium oxide films

D. R. Islamov; V. A. Gritsenko; Albert Chin

doi:10.3103/S8756699017020121

Charge transport in thin hafnium and zirconium oxide films

D. R. Islamov^*, V. A. Gritsenko, Albert Chin

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO₂/Ni and n-Si/ZrO₂/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO₂ and ZrO₂.

Original language	English
Pages (from-to)	184-189
Number of pages	6
Journal	Optoelectronics, Instrumentation and Data Processing
Volume	53
Issue number	2
DOIs	https://doi.org/10.3103/S8756699017020121
State	Published - 1 Mar 2017

Keywords

amorphous films
hafnium oxide
insulator with high insulator permittivity
transport
zirconium oxide

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title = "Charge transport in thin hafnium and zirconium oxide films",

abstract = "The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.",

keywords = "amorphous films, hafnium oxide, insulator with high insulator permittivity, transport, zirconium oxide",

author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Albert Chin",

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TY - JOUR

T1 - Charge transport in thin hafnium and zirconium oxide films

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Chin, Albert

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.

AB - The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.

KW - amorphous films

KW - hafnium oxide

KW - insulator with high insulator permittivity

KW - transport

KW - zirconium oxide

UR - http://www.scopus.com/inward/record.url?scp=85020552410&partnerID=8YFLogxK

U2 - 10.3103/S8756699017020121

DO - 10.3103/S8756699017020121

M3 - Article

AN - SCOPUS:85020552410

SN - 8756-6990

VL - 53

SP - 184

EP - 189

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

IS - 2

ER -

Charge transport in thin hafnium and zirconium oxide films

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