Charge quantity influence on resistance switching characteristic during forming process

Tian Jian Chu; Ting Chang Chang; Tsung Ming Tsai; Hsing Hua Wu; Jung Hui Chen; Kuan Chang Chang; Tai Fa Young; Kai Hsang Chen; Yong En Syu; Geng Wei Chang; Yao Feng Chang; Min Chen Chen; Jyun Hao Lou; Jhih Hong Pan; Jian Yu Chen; Ya-Hsiang Tai; Cong Ye; Hao Wang; Simon M. Sze

doi:10.1109/LED.2013.2242843

Charge quantity influence on resistance switching characteristic during forming process

Tian Jian Chu^*, Ting Chang Chang, Tsung Ming Tsai, Hsing Hua Wu, Jung Hui Chen, Kuan Chang Chang, Tai Fa Young, Kai Hsang Chen, Yong En Syu, Geng Wei Chang, Yao Feng Chang, Min Chen Chen, Jyun Hao Lou, Jhih Hong Pan, Jian Yu Chen, Ya-Hsiang Tai, Cong Ye, Hao Wang, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.

Original language	English
Article number	6473822
Pages (from-to)	502-504
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/LED.2013.2242843
State	Published - 2013

Keywords

Forming process
hafnium oxide ( HfO)
nonvolatile memory
resistance switching

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Chu, T. J., Chang, T. C., Tsai, T. M., Wu, H. H., Chen, J. H., Chang, K. C., Young, T. F., Chen, K. H., Syu, Y. E., Chang, G. W., Chang, Y. F., Chen, M. C., Lou, J. H., Pan, J. H., Chen, J. Y., Tai, Y.-H., Ye, C., Wang, H., & Sze, S. M. (2013). Charge quantity influence on resistance switching characteristic during forming process. Ieee Electron Device Letters, 34(4), 502-504. Article 6473822. https://doi.org/10.1109/LED.2013.2242843

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title = "Charge quantity influence on resistance switching characteristic during forming process",

abstract = "In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.",

keywords = "Forming process, hafnium oxide ( HfO), nonvolatile memory, resistance switching",

author = "Chu, {Tian Jian} and Chang, {Ting Chang} and Tsai, {Tsung Ming} and Wu, {Hsing Hua} and Chen, {Jung Hui} and Chang, {Kuan Chang} and Young, {Tai Fa} and Chen, {Kai Hsang} and Syu, {Yong En} and Chang, {Geng Wei} and Chang, {Yao Feng} and Chen, {Min Chen} and Lou, {Jyun Hao} and Pan, {Jhih Hong} and Chen, {Jian Yu} and Ya-Hsiang Tai and Cong Ye and Hao Wang and Sze, {Simon M.}",

year = "2013",

doi = "10.1109/LED.2013.2242843",

language = "English",

volume = "34",

pages = "502--504",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

Chu, TJ, Chang, TC, Tsai, TM, Wu, HH, Chen, JH, Chang, KC, Young, TF, Chen, KH, Syu, YE, Chang, GW, Chang, YF, Chen, MC, Lou, JH, Pan, JH, Chen, JY, Tai, Y-H, Ye, C, Wang, H & Sze, SM 2013, 'Charge quantity influence on resistance switching characteristic during forming process', Ieee Electron Device Letters, vol. 34, no. 4, 6473822, pp. 502-504. https://doi.org/10.1109/LED.2013.2242843

TY - JOUR

T1 - Charge quantity influence on resistance switching characteristic during forming process

AU - Chu, Tian Jian

AU - Chang, Ting Chang

AU - Tsai, Tsung Ming

AU - Wu, Hsing Hua

AU - Chen, Jung Hui

AU - Chang, Kuan Chang

AU - Young, Tai Fa

AU - Chen, Kai Hsang

AU - Syu, Yong En

AU - Chang, Geng Wei

AU - Chang, Yao Feng

AU - Chen, Min Chen

AU - Lou, Jyun Hao

AU - Pan, Jhih Hong

AU - Chen, Jian Yu

AU - Tai, Ya-Hsiang

AU - Ye, Cong

AU - Wang, Hao

AU - Sze, Simon M.

PY - 2013

Y1 - 2013

N2 - In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.

AB - In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access memory to activate the resistance switching behavior. However, overforming would lead to device damage. In general, the overshoot current has been considered as a degradation reason during the forming process. In this letter, the quantity of charge through the switching layer has been proven as the key element in the formation of the conduction path. Ultrafast pulse forming can form a discontinuous conduction path to reduce the operation power.

KW - Forming process

KW - hafnium oxide ( HfO)

KW - nonvolatile memory

KW - resistance switching

UR - http://www.scopus.com/inward/record.url?scp=84875663086&partnerID=8YFLogxK

U2 - 10.1109/LED.2013.2242843

DO - 10.1109/LED.2013.2242843

M3 - Article

AN - SCOPUS:84875663086

SN - 0741-3106

VL - 34

SP - 502

EP - 504

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 4

M1 - 6473822

ER -

Charge quantity influence on resistance switching characteristic during forming process

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