In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1 May 2001|
- N O
- Rapid thermal annealing (RTA)
- Si N