Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

Tung Ming Pan; Tan Fu Lei; Huang Chun Wen; Tien-Sheng Chao

doi:10.1109/16.918238

Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH ₃ nitridation and N ₂O RTA treatment

Tung Ming Pan^*, Tan Fu Lei, Huang Chun Wen, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this paper, we developed a new method to grow robust ultrathin oxynitride (E _OT = 18 Å) film with effective dielectric constant of 7.15. By NH ₃-nitridation of Si substrate, grown ultrathin Si ₃N ₄ with N ₂O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

Original language	English
Pages (from-to)	907-912
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	5
DOIs	https://doi.org/10.1109/16.918238
State	Published - 1 May 2001

Keywords

N O
NH
Nitridation
Oxynitride
Rapid thermal annealing (RTA)
Si N

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10.1109/16.918238

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title = "Characterized of ultrathin oxynitride (18-21 {\AA}) gate dielectrics by NH 3 nitridation and N 2O RTA treatment",

abstract = "In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 {\AA}) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.",

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author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Wen, {Huang Chun} and Tien-Sheng Chao",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Wen, Huang Chun

AU - Chao, Tien-Sheng

PY - 2001/5/1

Y1 - 2001/5/1

N2 - In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

AB - In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

KW - N O

KW - NH

KW - Nitridation

KW - Oxynitride

KW - Rapid thermal annealing (RTA)

KW - Si N

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Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH ₃ nitridation and N ₂O RTA treatment

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Keywords

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