Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

Yi Siang Shen; Wei Kai Wang; Ray-Hua Horng

doi:10.1109/JEDS.2017.2653419

Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

Yi Siang Shen, Wei Kai Wang, Ray-Hua Horng^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Review article › peer-review

36 Scopus citations

Abstract

Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < ?4.43 V, high off-state breakdown voltage of 378 V, high ION/IOFF ratio of 10⁶, and low gate leakage current.

Original language	English
Article number	7843599
Pages (from-to)	112-116
Number of pages	5
Journal	IEEE Journal of the Electron Devices Society
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/JEDS.2017.2653419
State	Published - 1 Mar 2017

Keywords

Zinc gallate
channel pinch-off
metal-oxide-semiconductor field-effect transistors (MOSFETs)

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10.1109/JEDS.2017.2653419

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title = "Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate",

abstract = "Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < ?4.43 V, high off-state breakdown voltage of 378 V, high ION/IOFF ratio of 106, and low gate leakage current.",

keywords = "Zinc gallate, channel pinch-off, metal-oxide-semiconductor field-effect transistors (MOSFETs)",

author = "Shen, {Yi Siang} and Wang, {Wei Kai} and Ray-Hua Horng",

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doi = "10.1109/JEDS.2017.2653419",

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T1 - Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

AU - Shen, Yi Siang

AU - Wang, Wei Kai

AU - Horng, Ray-Hua

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < ?4.43 V, high off-state breakdown voltage of 378 V, high ION/IOFF ratio of 106, and low gate leakage current.

AB - Zinc gallate (ZnGaO) epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition and fabricated into metal-oxide-semiconductor field-effect transistors (MOSFETs). The ZnGaO MOSFETs exhibited a complete channel pinch-off of the drain current for VGS < ?4.43 V, high off-state breakdown voltage of 378 V, high ION/IOFF ratio of 106, and low gate leakage current.

KW - Zinc gallate

KW - channel pinch-off

KW - metal-oxide-semiconductor field-effect transistors (MOSFETs)

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U2 - 10.1109/JEDS.2017.2653419

DO - 10.1109/JEDS.2017.2653419

M3 - Review article

AN - SCOPUS:85015881752

SN - 2168-6734

VL - 5

SP - 112

EP - 116

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

IS - 2

M1 - 7843599

ER -

Characterizations of Metal-Oxide-Semiconductor Field-Effect Transistors of ZnGaO Grown on Sapphire Substrate

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Keywords

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