Characterizations of flash memory on glass using LTPS TFT with an ultra-low-roughness poly-Si/SiO2 interface

Hung Tse Chen; Po Hao Tsai; Yu Cheng Chen; Chi Lin Chen; Jia Xing Lin; Jason C. Chang; C. W. Chen; H. Y. Lu; H. H. Wu; Po-Tsun Liu; T. C. Chang

doi:10.1889/1.2036205

Characterizations of flash memory on glass using LTPS TFT with an ultra-low-roughness poly-Si/SiO₂ interface

Hung Tse Chen^*, Po Hao Tsai, Yu Cheng Chen, Chi Lin Chen, Jia Xing Lin, Jason C. Chang, C. W. Chen, H. Y. Lu, H. H. Wu, Po-Tsun Liu, T. C. Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

In this paper, flash memories using low temperature poly-Si thin-film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness R_ms of poly-Si implemented in this work is less than 20Å. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 10⁴ P/E cycles.

Original language	English
Article number	27.2
Pages (from-to)	1152-1155
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	2
DOIs	https://doi.org/10.1889/1.2036205
State	Published - May 2005
Event	2005 SID International Symposium - Boston, MA, United States Duration: 25 May 2005 → 27 May 2005

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Chen, H. T., Tsai, P. H., Chen, Y. C., Chen, C. L., Lin, J. X., Chang, J. C., Chen, C. W., Lu, H. Y., Wu, H. H., Liu, P.-T., & Chang, T. C. (2005). Characterizations of flash memory on glass using LTPS TFT with an ultra-low-roughness poly-Si/SiO₂ interface. Digest of Technical Papers - SID International Symposium, 36(2), 1152-1155. Article 27.2. https://doi.org/10.1889/1.2036205

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title = "Characterizations of flash memory on glass using LTPS TFT with an ultra-low-roughness poly-Si/SiO2 interface",

abstract = "In this paper, flash memories using low temperature poly-Si thin-film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less than 20{\AA}. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 104 P/E cycles.",

author = "Chen, {Hung Tse} and Tsai, {Po Hao} and Chen, {Yu Cheng} and Chen, {Chi Lin} and Lin, {Jia Xing} and Chang, {Jason C.} and Chen, {C. W.} and Lu, {H. Y.} and Wu, {H. H.} and Po-Tsun Liu and Chang, {T. C.}",

year = "2005",

month = may,

doi = "10.1889/1.2036205",

language = "English",

volume = "36",

pages = "1152--1155",

journal = "Digest of Technical Papers - SID International Symposium",

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publisher = "John Wiley and Sons Inc.",

number = "2",

note = "2005 SID International Symposium ; Conference date: 25-05-2005 Through 27-05-2005",

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AU - Chen, Hung Tse

AU - Tsai, Po Hao

AU - Chen, Yu Cheng

AU - Chen, Chi Lin

AU - Lin, Jia Xing

AU - Chang, Jason C.

AU - Chen, C. W.

AU - Lu, H. Y.

AU - Wu, H. H.

AU - Liu, Po-Tsun

AU - Chang, T. C.

PY - 2005/5

Y1 - 2005/5

N2 - In this paper, flash memories using low temperature poly-Si thin-film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less than 20Å. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 104 P/E cycles.

AB - In this paper, flash memories using low temperature poly-Si thin-film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less than 20Å. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 104 P/E cycles.

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U2 - 10.1889/1.2036205

DO - 10.1889/1.2036205

M3 - Conference article

AN - SCOPUS:32244436804

SN - 0097-966X

VL - 36

SP - 1152

EP - 1155

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 2

M1 - 27.2

T2 - 2005 SID International Symposium

Y2 - 25 May 2005 through 27 May 2005

ER -

Characterizations of flash memory on glass using LTPS TFT with an ultra-low-roughness poly-Si/SiO₂ interface

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