Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal

Chien Ting Wu; Yao Jen Lee; Fu Kuo Hsueh; Po Jung Sung; Ta Chun Cho; Michael Ira Current; Tien-Sheng Chao

doi:10.1149/2.006405jss

Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal

Chien Ting Wu, Yao Jen Lee, Fu Kuo Hsueh, Po Jung Sung, Ta Chun Cho, Michael Ira Current, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide.

Original language	English
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	5
DOIs	https://doi.org/10.1149/2.006405jss
State	Published - 1 Jan 2014

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title = "Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal",

abstract = "A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide.",

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AU - Wu, Chien Ting

AU - Lee, Yao Jen

AU - Hsueh, Fu Kuo

AU - Sung, Po Jung

AU - Cho, Ta Chun

AU - Current, Michael Ira

AU - Chao, Tien-Sheng

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide.

AB - A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide.

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DO - 10.1149/2.006405jss

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VL - 3

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

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ER -

Characterization of ultra-thin Ni silicide film by two-step low temperature microwave anneal

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