Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

H. K. Chiu; T. L. Lin; Y. Hu; K. C. Leou; Horng-Chih Lin; M. S. Tsai; T. Y. Huang

doi:10.1116/1.1342866

Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl₂ helicon-wave plasma

H. K. Chiu^*, T. L. Lin, Y. Hu, K. C. Leou, Horng-Chih Lin, M. S. Tsai, T. Y. Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The etch rates of TiN and SiO₂ and TiN/SiO₂ selectivity as a function of Cl₂ and N₂ flow rate, bias power, and pressure were studied. The bias power affected the etch rate and the selectivity between TiN and SiO₂ can be achieved at low bias power. The etch rate increased with increasing pressure while the etch selectivity decreased as the pressure increased. This may be due to the atomic Cl radical density, the ion flux and the ion energy. Chlorine and nitrogen flow rate have no significant effect on etch selectivity and etch rate, respectively.

Original language	English
Pages (from-to)	455-459
Number of pages	5
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	19
Issue number	2
DOIs	https://doi.org/10.1116/1.1342866
State	Published - 1 Mar 2001

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title = "Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma",

abstract = "The etch rates of TiN and SiO2 and TiN/SiO2 selectivity as a function of Cl2 and N2 flow rate, bias power, and pressure were studied. The bias power affected the etch rate and the selectivity between TiN and SiO2 can be achieved at low bias power. The etch rate increased with increasing pressure while the etch selectivity decreased as the pressure increased. This may be due to the atomic Cl radical density, the ion flux and the ion energy. Chlorine and nitrogen flow rate have no significant effect on etch selectivity and etch rate, respectively.",

author = "Chiu, {H. K.} and Lin, {T. L.} and Y. Hu and Leou, {K. C.} and Horng-Chih Lin and Tsai, {M. S.} and Huang, {T. Y.}",

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T1 - Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

AU - Chiu, H. K.

AU - Lin, T. L.

AU - Hu, Y.

AU - Leou, K. C.

AU - Lin, Horng-Chih

AU - Tsai, M. S.

AU - Huang, T. Y.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - The etch rates of TiN and SiO2 and TiN/SiO2 selectivity as a function of Cl2 and N2 flow rate, bias power, and pressure were studied. The bias power affected the etch rate and the selectivity between TiN and SiO2 can be achieved at low bias power. The etch rate increased with increasing pressure while the etch selectivity decreased as the pressure increased. This may be due to the atomic Cl radical density, the ion flux and the ion energy. Chlorine and nitrogen flow rate have no significant effect on etch selectivity and etch rate, respectively.

AB - The etch rates of TiN and SiO2 and TiN/SiO2 selectivity as a function of Cl2 and N2 flow rate, bias power, and pressure were studied. The bias power affected the etch rate and the selectivity between TiN and SiO2 can be achieved at low bias power. The etch rate increased with increasing pressure while the etch selectivity decreased as the pressure increased. This may be due to the atomic Cl radical density, the ion flux and the ion energy. Chlorine and nitrogen flow rate have no significant effect on etch selectivity and etch rate, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0035272976&partnerID=8YFLogxK

U2 - 10.1116/1.1342866

DO - 10.1116/1.1342866

M3 - Article

AN - SCOPUS:0035272976

SN - 0734-2101

VL - 19

SP - 455

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JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 2

ER -

Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl₂ helicon-wave plasma

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