Thin stoichiometric carbon-free ZrO2 films were deposited on Si(100) using the novel precursor Zr(Oi-Pr)2(thd)2 dissolved in octane. XPS and HRTEM analysis showed that a Zr silicate layer is formed at the interface during deposition.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|State||Published - 1 May 2002|