Characterization of thin ZrO2 films deposited using Zr(Oi-Pr)2(thd)2 and O2 on Si(100)

H. W. Chen; D. Landheer; X. Wu; S. Moisa; G. I. Sproule; Tien-Sheng Chao; T. Y. Huang

doi:10.1116/1.1467358

Characterization of thin ZrO₂ films deposited using Zr(Oⁱ-Pr)₂(thd)₂ and O₂ on Si(100)

H. W. Chen^*, D. Landheer, X. Wu, S. Moisa, G. I. Sproule, Tien-Sheng Chao, T. Y. Huang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Thin stoichiometric carbon-free ZrO₂ films were deposited on Si(100) using the novel precursor Zr(Oⁱ-Pr)₂(thd)₂ dissolved in octane. XPS and HRTEM analysis showed that a Zr silicate layer is formed at the interface during deposition.

Original language	English
Pages (from-to)	1145-1148
Number of pages	4
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1467358
State	Published - 1 May 2002

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abstract = "Thin stoichiometric carbon-free ZrO2 films were deposited on Si(100) using the novel precursor Zr(Oi-Pr)2(thd)2 dissolved in octane. XPS and HRTEM analysis showed that a Zr silicate layer is formed at the interface during deposition.",

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AU - Chen, H. W.

AU - Landheer, D.

AU - Wu, X.

AU - Moisa, S.

AU - Sproule, G. I.

AU - Chao, Tien-Sheng

AU - Huang, T. Y.

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AB - Thin stoichiometric carbon-free ZrO2 films were deposited on Si(100) using the novel precursor Zr(Oi-Pr)2(thd)2 dissolved in octane. XPS and HRTEM analysis showed that a Zr silicate layer is formed at the interface during deposition.

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Characterization of thin ZrO₂ films deposited using Zr(Oⁱ-Pr)₂(thd)₂ and O₂ on Si(100)

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