Characterization of SOA in time domain and the improvement techniques for using in high-voltage integrated circuits

Wen Yi Chen; Ming-Dou Ker

doi:10.1109/TDMR.2012.2187450

Characterization of SOA in time domain and the improvement techniques for using in high-voltage integrated circuits

Wen Yi Chen^*, Ming-Dou Ker

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

20 Scopus citations

Abstract

Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.

Original language	English
Article number	6151077
Pages (from-to)	382-390
Number of pages	9
Journal	IEEE Transactions on Device and Materials Reliability
Volume	12
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2012.2187450
State	Published - 14 Jun 2012

Keywords

Electrical safe operating area (SOA) (eSOA)
SOA
power MOSFETs
snapback
thermal SOA (tSOA)

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10.1109/TDMR.2012.2187450

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abstract = "Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.",

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N2 - Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.

AB - Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.

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KW - power MOSFETs

KW - snapback

KW - thermal SOA (tSOA)

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Characterization of SOA in time domain and the improvement techniques for using in high-voltage integrated circuits

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Keywords

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