Characterization of SOA in time domain and the improvement techniques for using in high-voltage integrated circuits

Wen Yi Chen*, Ming-Dou Ker

*Corresponding author for this work

    Research output: Contribution to journalReview articlepeer-review

    22 Scopus citations

    Abstract

    Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.

    Original languageEnglish
    Article number6151077
    Pages (from-to)382-390
    Number of pages9
    JournalIEEE Transactions on Device and Materials Reliability
    Volume12
    Issue number2
    DOIs
    StatePublished - 2012

    Keywords

    • Electrical safe operating area (SOA) (eSOA)
    • SOA
    • power MOSFETs
    • snapback
    • thermal SOA (tSOA)

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