@inproceedings{01216c1c2a344064932fd7014bc671cc,
title = "Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks",
abstract = "We have examined the slow electron and hole trap density at TiN/Y2O3/SiGe MOS interfaces. The effect of trimethylaluminum (TMA) pre-treatment before Y2O3 deposition on the slow trap density has been studied. Also, the dependency of the slow trap density on Ge contents of SiGe has been systematically evaluated and the influence of the composition of interfacial layers (ILs) is examined. It is found that 10-cycle TMA treatment is effective to suppress the formation of slow traps attributable to Ge-O bonds in ILs. On the other hand, the density of electron and hole slow traps in the Y2O3/SiGe MOS interfaces increases with higher Ge content of SiGe, which can be explained by the formation of vacancy-related defects due to incorporation of Ge-O bonds into SiO2 IL networks.",
keywords = "MOS interfaces, reliability, SiGe, slow trap density",
author = "Lee, {T. E.} and K. Toprasertpong and M. Takenaka and S. Takagi",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405189",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
address = "美國",
}