Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy

K. P. Chang; S. L. Yang; D. S. Chuu; R. S. Hsiao; Jenn-Fang Chen; L. Wei; J. S. Wang; J. Y. Chi

doi:10.1063/1.1886278

Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy

K. P. Chang^*, S. L. Yang, D. S. Chuu, R. S. Hsiao, Jenn-Fang Chen, L. Wei, J. S. Wang, J. Y. Chi

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14 Al0.86 As and In0.14 Ga0.86 As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs.

Original language	English
Article number	083511
Journal	Journal of Applied Physics
Volume	97
Issue number	8
DOIs	https://doi.org/10.1063/1.1886278
State	Published - 27 Apr 2005

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title = "Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy",

abstract = "The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14 Al0.86 As and In0.14 Ga0.86 As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs.",

author = "Chang, {K. P.} and Yang, {S. L.} and Chuu, {D. S.} and Hsiao, {R. S.} and Jenn-Fang Chen and L. Wei and Wang, {J. S.} and Chi, {J. Y.}",

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T1 - Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy

AU - Chang, K. P.

AU - Yang, S. L.

AU - Chuu, D. S.

AU - Hsiao, R. S.

AU - Chen, Jenn-Fang

AU - Wei, L.

AU - Wang, J. S.

AU - Chi, J. Y.

PY - 2005/4/27

Y1 - 2005/4/27

N2 - The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14 Al0.86 As and In0.14 Ga0.86 As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs.

AB - The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14 Al0.86 As and In0.14 Ga0.86 As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs.

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U2 - 10.1063/1.1886278

DO - 10.1063/1.1886278

M3 - Article

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VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 083511

ER -

Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy

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