Abstract
Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500
Original language | English |
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Pages (from-to) | 1-6 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 414 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jul 2002 |
Keywords
- Dielectric constant
- Porous silicate films
- Thermal stability