Characterization of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin; M. F. Wang; C. C. Chen; S. K. Hsien; Chao-Hsin Chien; T. Y. Huang; C. Y. Chang; Tien-Sheng Chao

doi:10.1109/RELPHY.1998.670662

Characterization of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin^*, M. F. Wang, C. C. Chen, S. K. Hsien, Chao-Hsin Chien, T. Y. Huang, C. Y. Chang, Tien-Sheng Chao

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Qbd) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at room temperature and elevated temperature (180 °C) conditions. As the oxide thickness is thinned down below 3 nm, the Qbd becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that the negative plasma charging and high, process temperature are the key factors responsible for the damage.

Original language	English
Pages (from-to)	312-317
Number of pages	6
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/RELPHY.1998.670662
State	Published - 1 Jan 1998
Event	Proceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA Duration: 31 Mar 1998 → 2 Apr 1998

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@article{21836cfccb2f45f79fdb1cb4eaf84955,

title = "Characterization of plasma charging damage in ultrathin gate oxides",

abstract = "Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Qbd) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at room temperature and elevated temperature (180 °C) conditions. As the oxide thickness is thinned down below 3 nm, the Qbd becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that the negative plasma charging and high, process temperature are the key factors responsible for the damage.",

author = "Horng-Chih Lin and Wang, {M. F.} and Chen, {C. C.} and Hsien, {S. K.} and Chao-Hsin Chien and Huang, {T. Y.} and Chang, {C. Y.} and Tien-Sheng Chao",

year = "1998",

month = jan,

day = "1",

doi = "10.1109/RELPHY.1998.670662",

language = "English",

pages = "312--317",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 1998 36th IEEE International Reliability Physics Symposium ; Conference date: 31-03-1998 Through 02-04-1998",

}

TY - JOUR

T1 - Characterization of plasma charging damage in ultrathin gate oxides

AU - Lin, Horng-Chih

AU - Wang, M. F.

AU - Chen, C. C.

AU - Hsien, S. K.

AU - Chien, Chao-Hsin

AU - Huang, T. Y.

AU - Chang, C. Y.

AU - Chao, Tien-Sheng

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Qbd) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at room temperature and elevated temperature (180 °C) conditions. As the oxide thickness is thinned down below 3 nm, the Qbd becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that the negative plasma charging and high, process temperature are the key factors responsible for the damage.

AB - Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Qbd) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at room temperature and elevated temperature (180 °C) conditions. As the oxide thickness is thinned down below 3 nm, the Qbd becomes very sensitive to the stressing current density and temperature. Experimental results show that severe antenna effect would occur during plasma ashing treatment in devices with gate oxides as thin as 2.6 nm. It is concluded that the negative plasma charging and high, process temperature are the key factors responsible for the damage.

UR - http://www.scopus.com/inward/record.url?scp=0031674381&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.1998.670662

DO - 10.1109/RELPHY.1998.670662

M3 - Conference article

AN - SCOPUS:0031674381

SN - 0099-9512

SP - 312

EP - 317

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 1998 36th IEEE International Reliability Physics Symposium

Y2 - 31 March 1998 through 2 April 1998

ER -

Characterization of plasma charging damage in ultrathin gate oxides

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