Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

T. C. Wen*, Wei-I Lee, J. K. Sheu, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bulk Mg-doped InxGa1-xN is 1.65 × 1019 cm-3. Also, the RT photoluminescence (PL) spectra of Mg-related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process.

Original languageEnglish
Pages (from-to)427-430
Number of pages4
JournalSolid-State Electronics
Issue number3
StatePublished - 1 Mar 2001


  • Carrier concentration
  • Hall measurement
  • In mole fraction
  • Mg-doped InGaN
  • Mobility
  • Photoluminescence


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