Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

T. C. Wen; Wei-I Lee; J. K. Sheu; G. C. Chi

doi:10.1016/S0038-1101(01)00044-2

Characterization of p-type In_xGa_1-xN grown by metalorganic chemical vapor deposition

T. C. Wen^*, Wei-I Lee, J. K. Sheu, G. C. Chi

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

This study investigates the electrical and optical characteristics of Mg-doped In_xGa_1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped In_xGa_1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bulk Mg-doped In_xGa_1-xN is 1.65 × 10¹⁹ cm^-3. Also, the RT photoluminescence (PL) spectra of Mg-related emissions in In_xGa_1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped In_xGa_1-xN. This degradation might be created by the surface dissociation during the post-annealing process.

Original language	English
Pages (from-to)	427-430
Number of pages	4
Journal	Solid-State Electronics
Volume	45
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(01)00044-2
State	Published - 1 Mar 2001

Keywords

Carrier concentration
Hall measurement
In mole fraction
Mg-doped InGaN
Mobility
Photoluminescence

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10.1016/S0038-1101(01)00044-2

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title = "Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition",

abstract = "This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bulk Mg-doped InxGa1-xN is 1.65 × 1019 cm-3. Also, the RT photoluminescence (PL) spectra of Mg-related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process.",

keywords = "Carrier concentration, Hall measurement, In mole fraction, Mg-doped InGaN, Mobility, Photoluminescence",

author = "Wen, {T. C.} and Wei-I Lee and Sheu, {J. K.} and Chi, {G. C.}",

year = "2001",

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doi = "10.1016/S0038-1101(01)00044-2",

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journal = "Solid-State Electronics",

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TY - JOUR

T1 - Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

AU - Wen, T. C.

AU - Lee, Wei-I

AU - Sheu, J. K.

AU - Chi, G. C.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bulk Mg-doped InxGa1-xN is 1.65 × 1019 cm-3. Also, the RT photoluminescence (PL) spectra of Mg-related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process.

AB - This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bulk Mg-doped InxGa1-xN is 1.65 × 1019 cm-3. Also, the RT photoluminescence (PL) spectra of Mg-related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process.

KW - Carrier concentration

KW - Hall measurement

KW - In mole fraction

KW - Mg-doped InGaN

KW - Mobility

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0035278088&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(01)00044-2

DO - 10.1016/S0038-1101(01)00044-2

M3 - Article

AN - SCOPUS:0035278088

SN - 0038-1101

VL - 45

SP - 427

EP - 430

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Characterization of p-type In_xGa_1-xN grown by metalorganic chemical vapor deposition

Abstract

Keywords

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