Characterization of Oxide Layers on AlGaN Based DUV LEDs by TEM/STEM Analysis

Jong Shing Bow*, Jay Wang, Wei Chih Lai, Tien Yu Wang, Syuan Yu Sie, Sheng Po Chang, Cheng Huang Kuo, Jinn Kong Sheu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Optoelectrical properties of AlGaN-based DUV LEDs were improved by forming gallium oxide and aluminum-gallium oxide layers around sidewalls of GaN and AlGaN epitaxial layers by thermal annealing at temperature high than 850°C. Microstructure of oxide layers were investigated by TEM. Three oxide phases are observed on GaN and AlGaN epitaxial layers. They are all identified to be crystalline phases, one dense and two porous, by SADPs and TEM/STEM images. Combined with data of STEM/EDS analysis, these oxides are designated to be Ga2O3(I), Ga2O3(II), AlxGa2-xO3(I) and AlxGa2-xO3(II) respectively. The gallium oxide is suspected to be β-Ga2O3 by comparing experimental SADPs with simulated SADPs.

Original languageEnglish
Title of host publication2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665498159
DOIs
StatePublished - 2022
Event2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022 - Singapore, Singapore
Duration: 18 Jul 202221 Jul 2022

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2022-July

Conference

Conference2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2022
Country/TerritorySingapore
CitySingapore
Period18/07/2221/07/22

Keywords

  • AlGaN
  • aluminum-gallium oxide
  • EDS
  • gallium oxide
  • GaN
  • porous
  • STEM
  • TEM

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