Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films

D. S. Wuu; Ray-Hua Horng; F. C. Liao; C. C. Leu; T. Y. Huang; S. M. Sze; H. Y. Chen; C. Y. Chang

doi:10.1016/S0026-2714(99)00314-5

Characterization of NH₃ plasma-treated Ba_0.7Sr_0.3TiO₃ thin films

D. S. Wuu^*, Ray-Hua Horng, F. C. Liao, C. C. Leu, T. Y. Huang, S. M. Sze, H. Y. Chen, C. Y. Chang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effects of plasma surface treatment, using NH₃ gas, of Ba_0.7Sr_0.3TiO₃ (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the non-plasma-treated sample at an applied voltage of 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH₃ plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant.

Original language	English
Pages (from-to)	663-666
Number of pages	4
Journal	Microelectronics Reliability
Volume	40
Issue number	4-5
DOIs	https://doi.org/10.1016/S0026-2714(99)00314-5
State	Published - 1 Apr 2000

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title = "Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films",

abstract = "The effects of plasma surface treatment, using NH3 gas, of Ba0.7Sr0.3TiO3 (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the non-plasma-treated sample at an applied voltage of 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH3 plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant.",

author = "Wuu, {D. S.} and Ray-Hua Horng and Liao, {F. C.} and Leu, {C. C.} and Huang, {T. Y.} and Sze, {S. M.} and Chen, {H. Y.} and Chang, {C. Y.}",

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doi = "10.1016/S0026-2714(99)00314-5",

language = "English",

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journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films

AU - Wuu, D. S.

AU - Horng, Ray-Hua

AU - Liao, F. C.

AU - Leu, C. C.

AU - Huang, T. Y.

AU - Sze, S. M.

AU - Chen, H. Y.

AU - Chang, C. Y.

PY - 2000/4/1

Y1 - 2000/4/1

N2 - The effects of plasma surface treatment, using NH3 gas, of Ba0.7Sr0.3TiO3 (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the non-plasma-treated sample at an applied voltage of 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH3 plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant.

AB - The effects of plasma surface treatment, using NH3 gas, of Ba0.7Sr0.3TiO3 (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the non-plasma-treated sample at an applied voltage of 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH3 plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant.

UR - http://www.scopus.com/inward/record.url?scp=8644270653&partnerID=8YFLogxK

U2 - 10.1016/S0026-2714(99)00314-5

DO - 10.1016/S0026-2714(99)00314-5

M3 - Article

AN - SCOPUS:8644270653

SN - 0026-2714

VL - 40

SP - 663

EP - 666

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 4-5

ER -

Characterization of NH₃ plasma-treated Ba_0.7Sr_0.3TiO₃ thin films

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