Characterization of MgxZn1 - XO thin films grown on sapphire substrates by metalorganic chemical vapor deposition

C. C. Wu, D. S. Wuu, P. R. Lin, T. N. Chen, Ray-Hua Horng, S. L. Ou, Y. L. Tu, C. C. Wei, Z. C. Feng

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Wurtzite-structure MgxZn1 - xO materials with five different compositions of x from 0 to 0.14 were grown on sapphire substrates by metalorganic chemical vapor deposition. It was found that increasing Mg content in the MgxZn1 - xO not only increased the band gap energy of the film but was also beneficial to the epitaxial growth of p-type Mg xZn1 - xO without using any doping sources. In addition, the combined ultraviolet photoluminescence (PL) and Raman scattering spectra were measured with PL-Raman signals obtained together, showing a blue-shift of PL band and variation of resonant Raman multi-order longitudinal optical phonon modes with an increase of Mg content.

Original languageEnglish
Pages (from-to)1966-1970
Number of pages5
JournalThin Solid Films
Volume519
Issue number6
DOIs
StatePublished - 3 Jan 2011

Keywords

  • Metalorganic chemical vapor deposition
  • MgZnO
  • P-type
  • Photoluminescence
  • Raman scattering

Fingerprint

Dive into the research topics of 'Characterization of MgxZn1 - XO thin films grown on sapphire substrates by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this