TY - GEN
T1 - Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories
AU - Chen, Y. Y.
AU - Li, T. H.
AU - Kin, K. T.
AU - Chien, Chao-Hsin
AU - Lou, J. C.
PY - 2006/11/14
Y1 - 2006/11/14
N2 - In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.
AB - In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.
UR - http://www.scopus.com/inward/record.url?scp=33750806760&partnerID=8YFLogxK
U2 - 10.1109/NANOEL.2006.1609772
DO - 10.1109/NANOEL.2006.1609772
M3 - Conference contribution
AN - SCOPUS:33750806760
SN - 0780393589
SN - 9780780393585
T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
SP - 463
EP - 466
BT - NanoSingapore 2006
T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Y2 - 10 January 2006 through 13 January 2006
ER -