Characterization of hot-hole injection induced SILC and related disturbs in flash memories

C. M. Yih, Z. H. Ho, Steve S. Chung, M. S. Liang

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    10 Scopus citations

    Abstract

    In this paper, we have proposed a new method for the study of disturb failure mechanisms caused by stress induced leakage current (SILC) in source-side erased flash memories. This method is able to directly separate the individual components of SILC due to either carrier charging/discharging in the oxide or the positive charge/trap assisted electron tunneling into the floating gate. In addition, the present method is very sensitive with capability of measuring ultralow current (<10-19 A). Results show that, at low oxide field, the disturb is mainly contributed by the so-called charging/discharging of carriers into/from the oxide due to the capacitance coupling effect. While at high oxide field, the positive charge/trap assisted electron tunneling induced floating-gate charge variation is the major cause of disturb failure.

    Original languageEnglish
    Pages (from-to)300-306
    Number of pages7
    JournalIEEE Transactions on Electron Devices
    Volume48
    Issue number2
    DOIs
    StatePublished - 1 Feb 2001

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