@inproceedings{a02073a9c7ba4e4dbcb8046eca7be90e,
title = "Characterization of four-level random telegraph noise in a gate-all-around poly-Si nanowire transistor",
abstract = "Four-level random-telegraph-noise (RTN) characteristics of a gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistor induced by two discrete traps are studied in this work. By carefully analyzing the RTN, depths of the two traps in the gate oxide can be identified separately. Consistent information is obtained by assessing the probability of transitions between different levels.",
author = "Chang, {You Tai} and Li, {Pei Wen} and Lin, {Horng Chih}",
year = "2019",
month = jun,
doi = "10.23919/SNW.2019.8782974",
language = "English",
series = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
address = "美國",
note = "24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",
}