Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Yan Kui Liang, Jing Wei Lin, Yi Shuo Huang, Wei Cheng Lin, Bo Feng Young, Yu Chuan Shih, Chun Chieh Lu*, Sai Hooi Yeong, Yu Ming Lin, Po Tsun Liu, Edward Yi Chang, Chun Hsiung Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

In this work, we investigated the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitors on various refractory electrodes, including TiN, TaN, W, and Mo. By comparing different electrodes and annealing temperature, we found that the MFM capacitors with TiN and W electrodes showed both higher remanent polarization (2Pr) and lower leakage current for post-metal annealing (PMA) temperatures ranging from 400 °C to 600 °C. Moreover, the MFM capacitor with W electrode showed better saturated polarization-voltage (P-V) curve and less "wake up effect"during the polarization switching cycles, while the MFM capacitor with TiN electrode showed the lowest leakage current. The correlation of crystallization quality studied by X-ray diffraction and the ferroelectric characteristics for each type of MFM capacitors were also presented and compared in this study.

Original languageEnglish
Article number053012
JournalECS Journal of Solid State Science and Technology
Volume11
Issue number5
DOIs
StatePublished - May 2022

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