Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Yan Kui Liang; Jing Wei Lin; Yi Shuo Huang; Wei Cheng Lin; Bo Feng Young; Yu Chuan Shih; Chun Chieh Lu; Sai Hooi Yeong; Yu Ming Lin; Po Tsun Liu; Edward Yi Chang; Chun Hsiung Lin

doi:10.1149/2162-8777/ac6f1c

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Yan Kui Liang, Jing Wei Lin, Yi Shuo Huang, Wei Cheng Lin, Bo Feng Young, Yu Chuan Shih, Chun Chieh Lu^*, Sai Hooi Yeong, Yu Ming Lin, Po Tsun Liu, Edward Yi Chang, Chun Hsiung Lin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this work, we investigated the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitors on various refractory electrodes, including TiN, TaN, W, and Mo. By comparing different electrodes and annealing temperature, we found that the MFM capacitors with TiN and W electrodes showed both higher remanent polarization (2Pr) and lower leakage current for post-metal annealing (PMA) temperatures ranging from 400 °C to 600 °C. Moreover, the MFM capacitor with W electrode showed better saturated polarization-voltage (P-V) curve and less "wake up effect"during the polarization switching cycles, while the MFM capacitor with TiN electrode showed the lowest leakage current. The correlation of crystallization quality studied by X-ray diffraction and the ferroelectric characteristics for each type of MFM capacitors were also presented and compared in this study.

Original language	English
Article number	053012
Journal	ECS Journal of Solid State Science and Technology
Volume	11
Issue number	5
DOIs	https://doi.org/10.1149/2162-8777/ac6f1c
State	Published - May 2022

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Liang, Y. K., Lin, J. W., Huang, Y. S., Lin, W. C., Young, B. F., Shih, Y. C., Lu, C. C., Yeong, S. H., Lin, Y. M., Liu, P. T., Chang, E. Y., & Lin, C. H. (2022). Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes. ECS Journal of Solid State Science and Technology, 11(5), Article 053012. https://doi.org/10.1149/2162-8777/ac6f1c

@article{9b7901d324624680bd9776b14ec5280e,

title = "Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes",

abstract = "In this work, we investigated the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitors on various refractory electrodes, including TiN, TaN, W, and Mo. By comparing different electrodes and annealing temperature, we found that the MFM capacitors with TiN and W electrodes showed both higher remanent polarization (2Pr) and lower leakage current for post-metal annealing (PMA) temperatures ranging from 400 °C to 600 °C. Moreover, the MFM capacitor with W electrode showed better saturated polarization-voltage (P-V) curve and less {"}wake up effect{"}during the polarization switching cycles, while the MFM capacitor with TiN electrode showed the lowest leakage current. The correlation of crystallization quality studied by X-ray diffraction and the ferroelectric characteristics for each type of MFM capacitors were also presented and compared in this study.",

author = "Liang, {Yan Kui} and Lin, {Jing Wei} and Huang, {Yi Shuo} and Lin, {Wei Cheng} and Young, {Bo Feng} and Shih, {Yu Chuan} and Lu, {Chun Chieh} and Yeong, {Sai Hooi} and Lin, {Yu Ming} and Liu, {Po Tsun} and Chang, {Edward Yi} and Lin, {Chun Hsiung}",

note = "Publisher Copyright: {\textcopyright} 2022 The Electrochemical Society ({"}ECS{"}). Published on behalf of ECS by IOP Publishing Limited.",

year = "2022",

month = may,

doi = "10.1149/2162-8777/ac6f1c",

language = "English",

volume = "11",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

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T1 - Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

AU - Liang, Yan Kui

AU - Lin, Jing Wei

AU - Huang, Yi Shuo

AU - Lin, Wei Cheng

AU - Young, Bo Feng

AU - Shih, Yu Chuan

AU - Lu, Chun Chieh

AU - Yeong, Sai Hooi

AU - Lin, Yu Ming

AU - Liu, Po Tsun

AU - Chang, Edward Yi

AU - Lin, Chun Hsiung

PY - 2022/5

Y1 - 2022/5

N2 - In this work, we investigated the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitors on various refractory electrodes, including TiN, TaN, W, and Mo. By comparing different electrodes and annealing temperature, we found that the MFM capacitors with TiN and W electrodes showed both higher remanent polarization (2Pr) and lower leakage current for post-metal annealing (PMA) temperatures ranging from 400 °C to 600 °C. Moreover, the MFM capacitor with W electrode showed better saturated polarization-voltage (P-V) curve and less "wake up effect"during the polarization switching cycles, while the MFM capacitor with TiN electrode showed the lowest leakage current. The correlation of crystallization quality studied by X-ray diffraction and the ferroelectric characteristics for each type of MFM capacitors were also presented and compared in this study.

AB - In this work, we investigated the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitors on various refractory electrodes, including TiN, TaN, W, and Mo. By comparing different electrodes and annealing temperature, we found that the MFM capacitors with TiN and W electrodes showed both higher remanent polarization (2Pr) and lower leakage current for post-metal annealing (PMA) temperatures ranging from 400 °C to 600 °C. Moreover, the MFM capacitor with W electrode showed better saturated polarization-voltage (P-V) curve and less "wake up effect"during the polarization switching cycles, while the MFM capacitor with TiN electrode showed the lowest leakage current. The correlation of crystallization quality studied by X-ray diffraction and the ferroelectric characteristics for each type of MFM capacitors were also presented and compared in this study.

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U2 - 10.1149/2162-8777/ac6f1c

DO - 10.1149/2162-8777/ac6f1c

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AN - SCOPUS:85130999826

SN - 2162-8769

VL - 11

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 5

M1 - 053012

ER -

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

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