Characterization of ESD-induced electromigration on CMOS metallization in on-chip ESD protection circuit

Yang Shou Hou, Chun Yu Lin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Electrostatic discharge (ESD) and electromigration are critical issues that significantly impact the reliability of ICs. While both of these phenomena have been studied independently, the combination of the two, ESD-induced electromigration, has received less attention, potentially compromising IC reliability. This work analyzes various types of metal with different lengths, widths, and angles commonly used in ESD protection circuits in the CMOS process. The objective is to observe their behavior under continuous ESD zapping. The ESD-induced electromigration of metallization in the CMOS process has been analyzed, and metal sensitivity to system-level ESD events has also been identified. It is also analyzed from the perspective of energy that the ESD energy that metal can withstand will decrease as the ESD voltage increases, which will be even more detrimental to the ESD reliability of ICs. The findings from this study aim to provide valuable insights for designing metal lines in ICs to enhance ESD protection.

Original languageEnglish
Article number02SP58
JournalJapanese journal of applied physics
Volume63
Issue number2
DOIs
StatePublished - 29 Feb 2024

Keywords

  • back end of line (BEOL)
  • electromigration
  • electrostatic discharge (ESD)
  • metallization
  • system-level ESD

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