Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors

Yu Chun Chen; Ting Chang Chang; Hung Wei Li; Wan Fang Chung; Shih Cheng Chen; Chang Pei Wu; Yi Hsien Chen; Ya-Hsiang Tai; Tseung-Yuen Tseng; Fon Shan Yeh(Huang)

doi:10.1016/j.surfcoat.2012.02.057

Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors

Yu Chun Chen, Ting Chang Chang^*, Hung Wei Li, Wan Fang Chung, Shih Cheng Chen, Chang Pei Wu, Yi Hsien Chen, Ya-Hsiang Tai, Tseung-Yuen Tseng, Fon Shan Yeh(Huang)

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This study investigates environmentally dependent electrical performance as a function of hysteresis phenomena for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). Because ambient gas has a great influence on the electrical characteristics of zinc oxide-based TFTs during electrical measurements, the hysteresis for current-voltage and capacitance-voltage measurements are employed in different ambient gases (ambient air, vacuum, oxygen ambient and moisture ambient) to study this issue. Although the hysteresis phenomenon has been explained by the charge trapping and de-trapping model, in order to obtain stable electrical characteristics it is necessary to clarify the original principal mechanism leading to threshold voltage instability under gate bias operations in different environments. Also, the relationship between de-trapping rate and electrical hysteresis is investigated by prolonging the integration time of the semiconductor parameter analyzer. This study may be of importance in explaining the dynamic relationship between the TFT electrical characteristics and ambient gas, as well as providing a better understanding of the environment-dependent hysteresis phenomenon of the IGZO TFTs.

Original language	English
Pages (from-to)	531-534
Number of pages	4
Journal	Surface and Coatings Technology
Volume	231
DOIs	https://doi.org/10.1016/j.surfcoat.2012.02.057
State	Published - 25 Sep 2013

Keywords

Hysteresis
Indium gallium zinc oxide
Thin film transistors

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10.1016/j.surfcoat.2012.02.057

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title = "Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors",

abstract = "This study investigates environmentally dependent electrical performance as a function of hysteresis phenomena for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). Because ambient gas has a great influence on the electrical characteristics of zinc oxide-based TFTs during electrical measurements, the hysteresis for current-voltage and capacitance-voltage measurements are employed in different ambient gases (ambient air, vacuum, oxygen ambient and moisture ambient) to study this issue. Although the hysteresis phenomenon has been explained by the charge trapping and de-trapping model, in order to obtain stable electrical characteristics it is necessary to clarify the original principal mechanism leading to threshold voltage instability under gate bias operations in different environments. Also, the relationship between de-trapping rate and electrical hysteresis is investigated by prolonging the integration time of the semiconductor parameter analyzer. This study may be of importance in explaining the dynamic relationship between the TFT electrical characteristics and ambient gas, as well as providing a better understanding of the environment-dependent hysteresis phenomenon of the IGZO TFTs.",

keywords = "Hysteresis, Indium gallium zinc oxide, Thin film transistors",

author = "Chen, {Yu Chun} and Chang, {Ting Chang} and Li, {Hung Wei} and Chung, {Wan Fang} and Chen, {Shih Cheng} and Wu, {Chang Pei} and Chen, {Yi Hsien} and Ya-Hsiang Tai and Tseung-Yuen Tseng and Yeh(Huang), {Fon Shan}",

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AU - Chen, Yu Chun

AU - Chang, Ting Chang

AU - Li, Hung Wei

AU - Chung, Wan Fang

AU - Chen, Shih Cheng

AU - Wu, Chang Pei

AU - Chen, Yi Hsien

AU - Tai, Ya-Hsiang

AU - Tseng, Tseung-Yuen

AU - Yeh(Huang), Fon Shan

PY - 2013/9/25

Y1 - 2013/9/25

N2 - This study investigates environmentally dependent electrical performance as a function of hysteresis phenomena for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). Because ambient gas has a great influence on the electrical characteristics of zinc oxide-based TFTs during electrical measurements, the hysteresis for current-voltage and capacitance-voltage measurements are employed in different ambient gases (ambient air, vacuum, oxygen ambient and moisture ambient) to study this issue. Although the hysteresis phenomenon has been explained by the charge trapping and de-trapping model, in order to obtain stable electrical characteristics it is necessary to clarify the original principal mechanism leading to threshold voltage instability under gate bias operations in different environments. Also, the relationship between de-trapping rate and electrical hysteresis is investigated by prolonging the integration time of the semiconductor parameter analyzer. This study may be of importance in explaining the dynamic relationship between the TFT electrical characteristics and ambient gas, as well as providing a better understanding of the environment-dependent hysteresis phenomenon of the IGZO TFTs.

AB - This study investigates environmentally dependent electrical performance as a function of hysteresis phenomena for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). Because ambient gas has a great influence on the electrical characteristics of zinc oxide-based TFTs during electrical measurements, the hysteresis for current-voltage and capacitance-voltage measurements are employed in different ambient gases (ambient air, vacuum, oxygen ambient and moisture ambient) to study this issue. Although the hysteresis phenomenon has been explained by the charge trapping and de-trapping model, in order to obtain stable electrical characteristics it is necessary to clarify the original principal mechanism leading to threshold voltage instability under gate bias operations in different environments. Also, the relationship between de-trapping rate and electrical hysteresis is investigated by prolonging the integration time of the semiconductor parameter analyzer. This study may be of importance in explaining the dynamic relationship between the TFT electrical characteristics and ambient gas, as well as providing a better understanding of the environment-dependent hysteresis phenomenon of the IGZO TFTs.

KW - Hysteresis

KW - Indium gallium zinc oxide

KW - Thin film transistors

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DO - 10.1016/j.surfcoat.2012.02.057

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SP - 531

EP - 534

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors

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Keywords

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