Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou; C. Y. Liao; K. Y. Hsiang; C. Y. Lin; Y. D. Lin; P. C. Yeh; C. Y. Wang; H. Y. Yang; P. J. Tzeng; T. H. Hou; Y. T. Tang; M. H. Lee

doi:10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou
, C. Y. Liao
, K. Y. Hsiang
, C. Y. Lin
, Y. D. Lin
, P. C. Yeh
, C. Y. Wang
, H. Y. Yang
, P. J. Tzeng
, T. H. Hou
, Y. T. Tang^*
, M. H. Lee^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771012
State	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 18 Apr 2022 → 21 Apr 2022

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/22 → 21/04/22

Keywords

Double HZO
FeFET
ferroelectric

Access to Document

10.1109/VLSI-TSA54299.2022.9771012

Cite this

Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T., & Lee, M. H. (2022). Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Lou, Z. F. ; Liao, C. Y. ; Hsiang, K. Y. et al. / Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{64f8fa3735f941b2977af670c4d37afa,

title = "Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory",

abstract = "A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.",

keywords = "Double HZO, FeFET, ferroelectric",

author = "Lou, \{Z. F.\} and Liao, \{C. Y.\} and Hsiang, \{K. Y.\} and Lin, \{C. Y.\} and Lin, \{Y. D.\} and Yeh, \{P. C.\} and Wang, \{C. Y.\} and Yang, \{H. Y.\} and Tzeng, \{P. J.\} and Hou, \{T. H.\} and Tang, \{Y. T.\} and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771012",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Lou, ZF, Liao, CY, Hsiang, KY, Lin, CY, Lin, YD, Yeh, PC, Wang, CY, Yang, HY, Tzeng, PJ, Hou, TH, Tang, YT & Lee, MH 2022, Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. / Lou, Z. F.; Liao, C. Y.; Hsiang, K. Y. et al.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

AU - Lou, Z. F.

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Lin, C. Y.

AU - Lin, Y. D.

AU - Yeh, P. C.

AU - Wang, C. Y.

AU - Yang, H. Y.

AU - Tzeng, P. J.

AU - Hou, T. H.

AU - Tang, Y. T.

AU - Lee, M. H.

PY - 2022

Y1 - 2022

N2 - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

AB - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

KW - Double HZO

KW - FeFET

KW - ferroelectric

UR - https://www.scopus.com/pages/publications/85130432209

U2 - 10.1109/VLSI-TSA54299.2022.9771012

DO - 10.1109/VLSI-TSA54299.2022.9771012

M3 - Conference contribution

AN - SCOPUS:85130432209

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Lou ZF, Liao CY, Hsiang KY, Lin CY, Lin YD, Yeh PC et al. Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771012