Characterization of CVD TixCyNz films deposited as diffusion barriers for Cu on low-k dielectrics methylsilsequiazane

W. C. Gau; Po-Tsun Liu; T. C. Chang; L. J. Chen

doi:10.1557/PROC-766-E10.6

Characterization of CVD Ti_xC_yN_z films deposited as diffusion barriers for Cu on low-k dielectrics methylsilsequiazane

W. C. Gau^*, Po-Tsun Liu, T. C. Chang, L. J. Chen

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Metal organic chemical vapor deposition (MOCVD) Ti_xC_yN_z films were deposited by using tetrakis-dimethylamino-titanium (TDMAT) and NH₃ as a reaction gas at temperatures from 325 to 400°C with multi-layer Ar/NH₃ plasma treatment. Effects of annealing and Ar/NH₃ plasma treatment on the microstructure, composition, and electrical properties of Ti_xC_yN_z films were studied. By multi-layers plasma treatment, the resistivity of Ti_xC_yN_z barriers decreased from 960 to 548 μΩ-cm and the concentration of oxygen in barrier films are also decreased. The integration of the Ti_xC_yN_z with low-k methylsilsesquiazane (MSZ) was investigated through Cu/CVD-Ti_xC_yN_z/SiO₂ and Cu/ CVD-Ti_xC_yN_z/MSZ capacitors after being annealed in furnace at temperatures from 500 to 800°C. With thermal annealing in N₂ ambient for 30 min, Cu/CVD-Ti_xC_yN_z/MSZ structure remains metallurgically stable up to 700°C.

Original language	English
Pages (from-to)	439-444
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	766
DOIs	https://doi.org/10.1557/PROC-766-E10.6
State	Published - Apr 2003
Event	Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States Duration: 21 Apr 2003 → 25 Apr 2003

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@article{19bc3911303e443f97db3872ffe48789,

title = "Characterization of CVD TixCyNz films deposited as diffusion barriers for Cu on low-k dielectrics methylsilsequiazane",

abstract = "Metal organic chemical vapor deposition (MOCVD) TixCyNz films were deposited by using tetrakis-dimethylamino-titanium (TDMAT) and NH3 as a reaction gas at temperatures from 325 to 400°C with multi-layer Ar/NH3 plasma treatment. Effects of annealing and Ar/NH3 plasma treatment on the microstructure, composition, and electrical properties of TixCyNz films were studied. By multi-layers plasma treatment, the resistivity of TixCyNz barriers decreased from 960 to 548 μΩ-cm and the concentration of oxygen in barrier films are also decreased. The integration of the TixCyNz with low-k methylsilsesquiazane (MSZ) was investigated through Cu/CVD-TixCyNz/SiO2 and Cu/ CVD-TixCyNz/MSZ capacitors after being annealed in furnace at temperatures from 500 to 800°C. With thermal annealing in N2 ambient for 30 min, Cu/CVD-TixCyNz/MSZ structure remains metallurgically stable up to 700°C.",

author = "Gau, {W. C.} and Po-Tsun Liu and Chang, {T. C.} and Chen, {L. J.}",

year = "2003",

month = apr,

doi = "10.1557/PROC-766-E10.6",

language = "English",

volume = "766",

pages = "439--444",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 ; Conference date: 21-04-2003 Through 25-04-2003",

}

TY - JOUR

T1 - Characterization of CVD TixCyNz films deposited as diffusion barriers for Cu on low-k dielectrics methylsilsequiazane

AU - Gau, W. C.

AU - Liu, Po-Tsun

AU - Chang, T. C.

AU - Chen, L. J.

PY - 2003/4

Y1 - 2003/4

N2 - Metal organic chemical vapor deposition (MOCVD) TixCyNz films were deposited by using tetrakis-dimethylamino-titanium (TDMAT) and NH3 as a reaction gas at temperatures from 325 to 400°C with multi-layer Ar/NH3 plasma treatment. Effects of annealing and Ar/NH3 plasma treatment on the microstructure, composition, and electrical properties of TixCyNz films were studied. By multi-layers plasma treatment, the resistivity of TixCyNz barriers decreased from 960 to 548 μΩ-cm and the concentration of oxygen in barrier films are also decreased. The integration of the TixCyNz with low-k methylsilsesquiazane (MSZ) was investigated through Cu/CVD-TixCyNz/SiO2 and Cu/ CVD-TixCyNz/MSZ capacitors after being annealed in furnace at temperatures from 500 to 800°C. With thermal annealing in N2 ambient for 30 min, Cu/CVD-TixCyNz/MSZ structure remains metallurgically stable up to 700°C.

AB - Metal organic chemical vapor deposition (MOCVD) TixCyNz films were deposited by using tetrakis-dimethylamino-titanium (TDMAT) and NH3 as a reaction gas at temperatures from 325 to 400°C with multi-layer Ar/NH3 plasma treatment. Effects of annealing and Ar/NH3 plasma treatment on the microstructure, composition, and electrical properties of TixCyNz films were studied. By multi-layers plasma treatment, the resistivity of TixCyNz barriers decreased from 960 to 548 μΩ-cm and the concentration of oxygen in barrier films are also decreased. The integration of the TixCyNz with low-k methylsilsesquiazane (MSZ) was investigated through Cu/CVD-TixCyNz/SiO2 and Cu/ CVD-TixCyNz/MSZ capacitors after being annealed in furnace at temperatures from 500 to 800°C. With thermal annealing in N2 ambient for 30 min, Cu/CVD-TixCyNz/MSZ structure remains metallurgically stable up to 700°C.

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U2 - 10.1557/PROC-766-E10.6

DO - 10.1557/PROC-766-E10.6

M3 - Conference article

AN - SCOPUS:0346938331

SN - 0272-9172

VL - 766

SP - 439

EP - 444

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003

Y2 - 21 April 2003 through 25 April 2003

ER -

Characterization of CVD Ti_xC_yN_z films deposited as diffusion barriers for Cu on low-k dielectrics methylsilsequiazane

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