@inproceedings{03720f3712004a429b7c4f757383130d,
title = "Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique",
abstract = "We demonstrated a novel CMOS approach for the fabrication of high-performance Ge quantum dot (QD) MOSFETs offering great promises as optical switches and transducers for Si-based optical interconnects. Measured photocurrent to dark current ratio (Iph/Idark) and photoresponsivities from the Ge QD PT were as high as 272,000 and 1.7 A/W, respectively, under incident power of 20 μW at 980 nm illumination. Carrier dynamics in Ge QDs were characterized by applying a depleting voltage pulse to the gate of MOSFET and by time-resolved photoluminescence on Ge QD array.",
keywords = "Current measurement, Lighting, Logic gates, MOSFET, Oxidation, Silicon, Substrates",
author = "Kuo, {Ming Hao} and Chen, {Ho Chane} and Lai, {Wei Ting} and Pei-Wen Li",
note = "Publisher Copyright: {\textcopyright} 2015 JSAP.; Silicon Nanoelectronics Workshop, SNW 2015 ; Conference date: 14-06-2015 Through 15-06-2015",
year = "2015",
month = sep,
day = "24",
language = "English",
series = "2015 Silicon Nanoelectronics Workshop, SNW 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 Silicon Nanoelectronics Workshop, SNW 2015",
address = "美國",
}