@inproceedings{140f3af1bdf940319087803df40730d0,
title = "Characterization of 4H-SiC PMOSFET with P+Poly-Si Gate",
abstract = "With the progress of SiC technology, the performance of PMOSFET attracted more and more attentions. One of the critical issues of 4H-SiC PMOSFET is its high threshold voltage. In this work, the characteristics of PMOSFET with P+ poly-Si gate is reported for the first time. A reduction of threshold voltage of 0.38 V is obtained. High performance PMOSFET and symmetrical voltage transfer characteristic of CMOS inverter are demonstrated.",
author = "Hung, {Chia Lung} and Tsui, {Bing Yue}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",
year = "2023",
doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134380",
language = "English",
series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",
address = "United States",
}