Characterization of 4H-SiC PMOSFET with P+Poly-Si Gate

Chia Lung Hung, Bing Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

With the progress of SiC technology, the performance of PMOSFET attracted more and more attentions. One of the critical issues of 4H-SiC PMOSFET is its high threshold voltage. In this work, the characteristics of PMOSFET with P+ poly-Si gate is reported for the first time. A reduction of threshold voltage of 0.38 V is obtained. High performance PMOSFET and symmetrical voltage transfer characteristic of CMOS inverter are demonstrated.

Original languageEnglish
Title of host publication2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350334166
DOIs
StatePublished - 2023
Event2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
Duration: 17 Apr 202320 Apr 2023

Publication series

Name2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/TerritoryTaiwan
CityHsinchu
Period17/04/2320/04/23

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