Characterization and lithographic parameters extraction for the modified resists

Fu-Hsiang Ko*, June Kuen Lu, Tieh Chi Chu, Tiao Yuan Huang, Chin Cheng Yang, Jinn Tsair Sheu, Hui Ling Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The modification of the i-line resist structure after spiking with various amount of poly(4-vinylphenol) polymer is characterized by the spectra of ultraviolet visible (UV-VIS) and gel permeation chromatography (GPC). The chemical structure of photoactive compound is found to be unchanged after modification, while slight change in the polymer chain is observed. The resist layer coated onto the wafer is characterized by various methods including n&k analyzer, Nanospec, Fourier transform infrared red (FTIR), thermogravimetric analysis (TGA), and differential scanning calorimetry (DSC) to fully evaluate the film properties in terms of porosity, thickness, vibrational spectrum, and thermal stability. Our thermal analysis results show that the resists are mainly decomposed in three stages. The photoactive compound (PAC) is found to decompose during the first stage, while the polymer decomposes during the latter stages. The resist exposure parameters, namely, A, B and C at 365 nm are determined by the absorbance measurement. The extracted parameters are further used in the resist profile simulation by PROLITH/2. It is shown that the spiking of poly(4-vinylphenol) polymer into the resist can improve the resolution and linearity for dense lines. In addition, the swing effects can be reduced by up to 35 and 31% for dense and isolated lines apter resist modification, respectively.

Original languageEnglish
Pages (from-to)429-439
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3678
Issue numberI
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1999 Microlithography - Advances in Resist Technology and Processing XVI - Santa Clara, CA, USA
Duration: 15 Mar 199917 Mar 1999

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