Characteristics variability of novel lateral asymmetry nano-MOSFETs due to random discrete dopant

Keyphrases

• Asymmetric Doping 50%
• Bulk MOSFET 50%
• Capacitance-frequency Characteristics 50%
• Channel Doping 50%
• Characteristic Fluctuation 50%
• Device Characteristics 50%
• Discrete Dopants 50%
• Dopant Distribution 50%
• Doping Profile 100%
• Gate Capacitance 50%
• High-frequency Characteristics 100%
• Lateral Asymmetric Channel 50%
• Lateral Asymmetry 100%
• MOSFET 50%
• Nano-MOSFET 100%
• Near-source 100%
• Random Discrete Dopants 100%
• Random Dopants 50%
• Short Channel Effects 50%
• Sub-20 Nm 50%

Engineering

• Channel Device 33%
• Channel Region 33%
• Dopants 100%
• Drain End 33%
• Field Effect Transistor 33%
• Frequency Characteristic 66%
• Gate Capacitance 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%

Material Science

• Capacitance 33%
• Doping (Additives) 100%
• Field Effect Transistor 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Silicon 33%