Abstract
In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide Al2O3 and hafnium oxide HfO2 inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al2O3 and HfO 2 IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO2 possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al2O3 IPD than the HfO2 IPD.
Original language | English |
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Article number | 5605221 |
Pages (from-to) | 1446-1448 |
Number of pages | 3 |
Journal | Ieee Electron Device Letters |
Volume | 31 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2010 |
Keywords
- AlO
- fluorine
- HfO