Characteristics of the fluorinated high-κ inter-poly dielectrics

Chih Ren Hsieh*, Yung Yu Chen, Kwung Wen Lu, Kuo-Jui Lin, Jen Chung Lou

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    6 Scopus citations

    Abstract

    In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide Al2O3 and hafnium oxide HfO2 inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al2O3 and HfO 2 IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO2 possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al2O3 IPD than the HfO2 IPD.

    Original languageEnglish
    Article number5605221
    Pages (from-to)1446-1448
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume31
    Issue number12
    DOIs
    StatePublished - Dec 2010

    Keywords

    • AlO
    • fluorine
    • HfO

    Fingerprint

    Dive into the research topics of 'Characteristics of the fluorinated high-κ inter-poly dielectrics'. Together they form a unique fingerprint.

    Cite this