Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N2/N2O annealing

Jiann Heng Chen; Tan Fu Lei; Jian Hong Chen; Tien-Sheng Chao

doi:10.1149/1.1394054

Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N₂/N₂O annealing

Jiann Heng Chen, Tan Fu Lei, Jian Hong Chen, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The integrity of tetraethylorthosilicate (TEOS) polyoxide using chemical mechanical polishing (CMP) plus a high temperature rapid thermal annealing (RTA) step was studied in this work.The surface morpholgy of polysilicon is improved after a CMP process. Polyoxides deposited by low pressure chemical vapor deposition (LPCVD) TEOS in conjunction with CMP and RTA N₂/N₂O annealing exhibit a better current-electric field (J-E) curve, higher charge to breakdown ratio, and lower electron trapping rate. In addition, the composite bilayer (TEOS deposited and thermally grown by RTA) polyoxide film introduces an asymmetry of electrical leakage current, trapping characterization, and charge to breakdown, with respect to the injection of different polarity (+V_g and -V_g).

Original language	English
Pages (from-to)	4282-4288
Number of pages	7
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	11
DOIs	https://doi.org/10.1149/1.1394054
State	Published - 1 Nov 2000

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title = "Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N2/N2O annealing",

abstract = "The integrity of tetraethylorthosilicate (TEOS) polyoxide using chemical mechanical polishing (CMP) plus a high temperature rapid thermal annealing (RTA) step was studied in this work.The surface morpholgy of polysilicon is improved after a CMP process. Polyoxides deposited by low pressure chemical vapor deposition (LPCVD) TEOS in conjunction with CMP and RTA N2/N2O annealing exhibit a better current-electric field (J-E) curve, higher charge to breakdown ratio, and lower electron trapping rate. In addition, the composite bilayer (TEOS deposited and thermally grown by RTA) polyoxide film introduces an asymmetry of electrical leakage current, trapping characterization, and charge to breakdown, with respect to the injection of different polarity (+Vg and -Vg).",

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T2 - Improvement by CMP and high temperature RTA N2/N2O annealing

AU - Chen, Jiann Heng

AU - Lei, Tan Fu

AU - Chen, Jian Hong

AU - Chao, Tien-Sheng

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N2 - The integrity of tetraethylorthosilicate (TEOS) polyoxide using chemical mechanical polishing (CMP) plus a high temperature rapid thermal annealing (RTA) step was studied in this work.The surface morpholgy of polysilicon is improved after a CMP process. Polyoxides deposited by low pressure chemical vapor deposition (LPCVD) TEOS in conjunction with CMP and RTA N2/N2O annealing exhibit a better current-electric field (J-E) curve, higher charge to breakdown ratio, and lower electron trapping rate. In addition, the composite bilayer (TEOS deposited and thermally grown by RTA) polyoxide film introduces an asymmetry of electrical leakage current, trapping characterization, and charge to breakdown, with respect to the injection of different polarity (+Vg and -Vg).

AB - The integrity of tetraethylorthosilicate (TEOS) polyoxide using chemical mechanical polishing (CMP) plus a high temperature rapid thermal annealing (RTA) step was studied in this work.The surface morpholgy of polysilicon is improved after a CMP process. Polyoxides deposited by low pressure chemical vapor deposition (LPCVD) TEOS in conjunction with CMP and RTA N2/N2O annealing exhibit a better current-electric field (J-E) curve, higher charge to breakdown ratio, and lower electron trapping rate. In addition, the composite bilayer (TEOS deposited and thermally grown by RTA) polyoxide film introduces an asymmetry of electrical leakage current, trapping characterization, and charge to breakdown, with respect to the injection of different polarity (+Vg and -Vg).

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Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N₂/N₂O annealing

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