Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

C. F. Lin; H. H. Yao; J. W. Lu; Y. L. Hsieh; Hao-Chung Kuo; S. C. Wang

doi:10.1016/j.jcrysgro.2003.11.028

Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

C. F. Lin^*
, H. H. Yao
, J. W. Lu
, Y. L. Hsieh
, Hao-Chung Kuo
, S. C. Wang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

31 Scopus citations

Abstract

The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3λ InGaN/GaN MQW LED cavity between the top TiO₂/SiO₂ DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410nm emission peak and a low thermally induced red-shift effect (0.12nm/kA/cm²) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO ₂/SiO₂ DBR layers under 600A/cm² inject current density. The narrow line width of 7.4nm, emission peak localization at 410nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure.

Original language	English
Pages (from-to)	359-363
Number of pages	5
Journal	Journal of Crystal Growth
Volume	261
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.11.028
State	Published - 19 Jan 2004
Event	Proceedings of the 11th Biennia, (US) Workshop on Organometall - Keystone, CO, United States Duration: 20 Jul 2003 → 24 Jul 2003

Keywords

A3. Metalorganic chemical vapor deposition
B2. AlN/GaN
B2. Distributed Bragg reflectors
B2. GaN
B2. InGaN/GaN
B3. Resonant-cavity light-emitting diode

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10.1016/j.jcrysgro.2003.11.028

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@article{3fd85e3558f7424692f571c46880e3ee,

title = "Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes",

abstract = "The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3λ InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7\%, reflectance) and the bottom AlN/GaN DBR (90.4\%) stack. A stable 410nm emission peak and a low thermally induced red-shift effect (0.12nm/kA/cm2) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO 2/SiO2 DBR layers under 600A/cm2 inject current density. The narrow line width of 7.4nm, emission peak localization at 410nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure.",

keywords = "A3. Metalorganic chemical vapor deposition, B2. AlN/GaN, B2. Distributed Bragg reflectors, B2. GaN, B2. InGaN/GaN, B3. Resonant-cavity light-emitting diode",

author = "Lin, \{C. F.\} and Yao, \{H. H.\} and Lu, \{J. W.\} and Hsieh, \{Y. L.\} and Hao-Chung Kuo and Wang, \{S. C.\}",

year = "2004",

month = jan,

day = "19",

doi = "10.1016/j.jcrysgro.2003.11.028",

language = "English",

volume = "261",

pages = "359--363",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "2-3",

note = "Proceedings of the 11th Biennia, (US) Workshop on Organometall ; Conference date: 20-07-2003 Through 24-07-2003",

}

TY - JOUR

T1 - Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

AU - Lin, C. F.

AU - Yao, H. H.

AU - Lu, J. W.

AU - Hsieh, Y. L.

AU - Kuo, Hao-Chung

AU - Wang, S. C.

PY - 2004/1/19

Y1 - 2004/1/19

N2 - The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3λ InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410nm emission peak and a low thermally induced red-shift effect (0.12nm/kA/cm2) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO 2/SiO2 DBR layers under 600A/cm2 inject current density. The narrow line width of 7.4nm, emission peak localization at 410nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure.

AB - The resonant-cavity light-emitting diode (RC-LED) structure was grown by MOCVD. The structure of RC-LED consisted of a 3λ InGaN/GaN MQW LED cavity between the top TiO2/SiO2 DBR (81.7%, reflectance) and the bottom AlN/GaN DBR (90.4%) stack. A stable 410nm emission peak and a low thermally induced red-shift effect (0.12nm/kA/cm2) were measured by varying the injection current density. The light output power of the full RC-LED device was three times higher than the RC-LED without top TiO 2/SiO2 DBR layers under 600A/cm2 inject current density. The narrow line width of 7.4nm, emission peak localization at 410nm, and three times higher output power were caused by the resonance effect in this vertical cavity structure.

KW - A3. Metalorganic chemical vapor deposition

KW - B2. AlN/GaN

KW - B2. Distributed Bragg reflectors

KW - B2. GaN

KW - B2. InGaN/GaN

KW - B3. Resonant-cavity light-emitting diode

UR - https://www.scopus.com/pages/publications/0348046462

U2 - 10.1016/j.jcrysgro.2003.11.028

DO - 10.1016/j.jcrysgro.2003.11.028

M3 - Conference article

AN - SCOPUS:0348046462

SN - 0022-0248

VL - 261

SP - 359

EP - 363

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2-3

T2 - Proceedings of the 11th Biennia, (US) Workshop on Organometall

Y2 - 20 July 2003 through 24 July 2003

ER -

Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes

Abstract

Keywords

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