Characteristics of sputtered TaX absorbers for X-ray mask

Jeng-Tzong Sheu; A. Chu; J. H. Ding; S. Su

doi:10.1117/12.351128

Characteristics of sputtered TaX absorbers for X-ray mask

Jeng-Tzong Sheu^*, A. Chu, J. H. Ding, S. Su

^*Corresponding author for this work

Institute of Biomedical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The materials of x-ray absorbers for x-ray mask have been changed from gold (Au) and tungsten-based alloys to tantalum (Ta) and Ta-based compounds in x-ray lithography (XRL). Different candidates of x-ray absorber, especially Ta-based (TaX) compounds, were sputtered and evaluated in this study. By incorporating silicon or germanium into tantalum, amorphous TaSi-based and TaGe-based compounds were formed and qualified as the absorber materials. Because the reproducibility of as-deposited stress by tuning the sputtering parameters is not so well for these compounds right after sputtering, we utilized the step annealing by RTA to control the stress such that within ±20 MPa is obtainable. Furthermore, with N₂ plasma treatment in PECVD chamber the slope of stress with respect to annealing temperature is smaller and posses good stability after long-time exposure to the air. Finally, the etching properties of TaX compounds were compared with and without tri-layer structure of oxide/absorber/oxide. And, 0.35 μm patterns are etched successfully with vertical sidewall by Cl₂ etchant.

Original language	English
Pages (from-to)	42-45
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3676
Issue number	I
DOIs	https://doi.org/10.1117/12.351128
State	Published - 1999
Event	Proceedings of the 1999 Emerging Lithographic Technologies III - Santa Clara, CA, USA Duration: 15 Mar 1999 → 17 Mar 1999

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@article{2dad0f57a2714358b5026b493d14c972,

title = "Characteristics of sputtered TaX absorbers for X-ray mask",

abstract = "The materials of x-ray absorbers for x-ray mask have been changed from gold (Au) and tungsten-based alloys to tantalum (Ta) and Ta-based compounds in x-ray lithography (XRL). Different candidates of x-ray absorber, especially Ta-based (TaX) compounds, were sputtered and evaluated in this study. By incorporating silicon or germanium into tantalum, amorphous TaSi-based and TaGe-based compounds were formed and qualified as the absorber materials. Because the reproducibility of as-deposited stress by tuning the sputtering parameters is not so well for these compounds right after sputtering, we utilized the step annealing by RTA to control the stress such that within ±20 MPa is obtainable. Furthermore, with N2 plasma treatment in PECVD chamber the slope of stress with respect to annealing temperature is smaller and posses good stability after long-time exposure to the air. Finally, the etching properties of TaX compounds were compared with and without tri-layer structure of oxide/absorber/oxide. And, 0.35 μm patterns are etched successfully with vertical sidewall by Cl2 etchant.",

author = "Jeng-Tzong Sheu and A. Chu and Ding, {J. H.} and S. Su",

year = "1999",

doi = "10.1117/12.351128",

language = "English",

volume = "3676",

pages = "42--45",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

number = "I",

note = "Proceedings of the 1999 Emerging Lithographic Technologies III ; Conference date: 15-03-1999 Through 17-03-1999",

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TY - JOUR

T1 - Characteristics of sputtered TaX absorbers for X-ray mask

AU - Sheu, Jeng-Tzong

AU - Chu, A.

AU - Ding, J. H.

AU - Su, S.

PY - 1999

Y1 - 1999

N2 - The materials of x-ray absorbers for x-ray mask have been changed from gold (Au) and tungsten-based alloys to tantalum (Ta) and Ta-based compounds in x-ray lithography (XRL). Different candidates of x-ray absorber, especially Ta-based (TaX) compounds, were sputtered and evaluated in this study. By incorporating silicon or germanium into tantalum, amorphous TaSi-based and TaGe-based compounds were formed and qualified as the absorber materials. Because the reproducibility of as-deposited stress by tuning the sputtering parameters is not so well for these compounds right after sputtering, we utilized the step annealing by RTA to control the stress such that within ±20 MPa is obtainable. Furthermore, with N2 plasma treatment in PECVD chamber the slope of stress with respect to annealing temperature is smaller and posses good stability after long-time exposure to the air. Finally, the etching properties of TaX compounds were compared with and without tri-layer structure of oxide/absorber/oxide. And, 0.35 μm patterns are etched successfully with vertical sidewall by Cl2 etchant.

AB - The materials of x-ray absorbers for x-ray mask have been changed from gold (Au) and tungsten-based alloys to tantalum (Ta) and Ta-based compounds in x-ray lithography (XRL). Different candidates of x-ray absorber, especially Ta-based (TaX) compounds, were sputtered and evaluated in this study. By incorporating silicon or germanium into tantalum, amorphous TaSi-based and TaGe-based compounds were formed and qualified as the absorber materials. Because the reproducibility of as-deposited stress by tuning the sputtering parameters is not so well for these compounds right after sputtering, we utilized the step annealing by RTA to control the stress such that within ±20 MPa is obtainable. Furthermore, with N2 plasma treatment in PECVD chamber the slope of stress with respect to annealing temperature is smaller and posses good stability after long-time exposure to the air. Finally, the etching properties of TaX compounds were compared with and without tri-layer structure of oxide/absorber/oxide. And, 0.35 μm patterns are etched successfully with vertical sidewall by Cl2 etchant.

UR - http://www.scopus.com/inward/record.url?scp=0032678330&partnerID=8YFLogxK

U2 - 10.1117/12.351128

DO - 10.1117/12.351128

M3 - Conference article

AN - SCOPUS:0032678330

SN - 0277-786X

VL - 3676

SP - 42

EP - 45

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

IS - I

T2 - Proceedings of the 1999 Emerging Lithographic Technologies III

Y2 - 15 March 1999 through 17 March 1999

ER -

Characteristics of sputtered TaX absorbers for X-ray mask

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