Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers

Hung Pin D. Yang*, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Nikolai A. Maleev, Sergej A. Blokhin, Hao-Chung Kuo, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

An InGaAs submonolayer (SML) quantum-dot photonic-crystal verti cal-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device.

Original languageEnglish
Pages (from-to)9078-9082
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number12
DOIs
StatePublished - 7 Dec 2006

Keywords

  • Quantum-dot
  • Single-mode
  • Submonolayer
  • VCSEL

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