CHARACTERISTICS OF SHORT-CHANNEL MOSFETs IN THE BREAKDOWN REGIME.

F. C. Hsu^*, R. S. Muller, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Original language	English
Pages (from-to)	282-285
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1982.190274
State	Published - 1 Dec 1982

Access to Document

@article{7b1d046f8e364310b023ff439cf513a9,

title = "CHARACTERISTICS OF SHORT-CHANNEL MOSFETs IN THE BREAKDOWN REGIME.",

author = "Hsu, {F. C.} and Muller, {R. S.} and Chen-Ming Hu",

year = "1982",

month = dec,

day = "1",

doi = "10.1109/IEDM.1982.190274",

language = "English",

pages = "282--285",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - CHARACTERISTICS OF SHORT-CHANNEL MOSFETs IN THE BREAKDOWN REGIME.

AU - Hsu, F. C.

AU - Muller, R. S.

AU - Hu, Chen-Ming

PY - 1982/12/1

Y1 - 1982/12/1

UR - http://www.scopus.com/inward/record.url?scp=0020274102&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1982.190274

DO - 10.1109/IEDM.1982.190274

M3 - Conference article

AN - SCOPUS:0020274102

SP - 282

EP - 285

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -