Characteristics of polysilicon oxides combining N 2O nitridation and CMP processes

Tan Fu Lei, Jiann Heng Chen, Ming Fang Wang, Tien-Sheng Chao

Research output: Contribution to journalArticlepeer-review

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This paper present a high-quality polysilicon oxide combining N 2O nitridation and chemical mechanical polishing (CMP) processes. Experimental results indicate that polyoxide grown on the CMP sample exhibits a lower leakage current, higher dielectric breakdown field, higher electron barrier height, less electron trapping rate, higher charge-to-breakdown (Q bd), and lower density of trapping charge than those of non-CMP samples. In addition, the CMP process enhances nitrogen incorporation at the interface by the N 2O nitridation, ultimately improving the polyoxide quality. Moreover, the CMP process smooths the surface of polysilicon and this planar surface reduces the out-diffusion of the phosphorous during thermal oxidation.

Original languageEnglish
Pages (from-to)1545-1552
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - 1 Aug 2000


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