In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 °C, steeper S.S. and Ion/Ioff>107 could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 °C possessed lower Ioff and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.
- forming gas annealing (FGA)
- Junctionless field-effect-transistor (JL-FET)