Characteristics of Poly-Si Junctionless FinFETs with HfZrO Using Forming Gas Annealing

Sheng Ti Chung; Yao Jen Lee; Tien Sheng Chao

doi:10.1109/TNANO.2020.2992797

Characteristics of Poly-Si Junctionless FinFETs with HfZrO Using Forming Gas Annealing

Sheng Ti Chung, Yao Jen Lee^*, Tien Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 °C, steeper S.S. and I_on/I_off>10⁷ could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 °C possessed lower I_off and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.

Original language	English
Article number	9091928
Pages (from-to)	390-396
Number of pages	7
Journal	IEEE Transactions on Nanotechnology
Volume	19
DOIs	https://doi.org/10.1109/TNANO.2020.2992797
State	Published - 1 Jan 2020

Keywords

ferroelectric
FinFETs
forming gas annealing (FGA)
Junctionless field-effect-transistor (JL-FET)
PMA

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title = "Characteristics of Poly-Si Junctionless FinFETs with HfZrO Using Forming Gas Annealing",

abstract = "In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 °C, steeper S.S. and Ion/Ioff>107 could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 °C possessed lower Ioff and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.",

keywords = "ferroelectric, FinFETs, forming gas annealing (FGA), Junctionless field-effect-transistor (JL-FET), PMA",

author = "Chung, {Sheng Ti} and Lee, {Yao Jen} and Chao, {Tien Sheng}",

year = "2020",

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doi = "10.1109/TNANO.2020.2992797",

language = "English",

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journal = "IEEE Transactions on Nanotechnology",

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AU - Chung, Sheng Ti

AU - Lee, Yao Jen

AU - Chao, Tien Sheng

PY - 2020/1/1

Y1 - 2020/1/1

N2 - In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 °C, steeper S.S. and Ion/Ioff>107 could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 °C possessed lower Ioff and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.

AB - In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless FinFETs (JL-FinFETs) with HfZrO were successfully fabricated and demonstrated. The subthreshold slope (S.S.) of JL-FinFETs with HfZrO was very sensitive to post-metal annealing (PMA) conditions and fin width. With PMA at 700 °C, steeper S.S. and Ion/Ioff>107 could be obtained owing to the ferroelectric effect. JL-FinFETs with PMA at 700 °C possessed lower Ioff and offered the promise of higher integration flexibility for Si CMOS compatible process for future applications. Besides, the JL-FinFETs with forming gas annealing (FGA) had a small hysteresis and achieved the improved S.S.

KW - ferroelectric

KW - FinFETs

KW - forming gas annealing (FGA)

KW - Junctionless field-effect-transistor (JL-FET)

KW - PMA

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SN - 1536-125X

VL - 19

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JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

M1 - 9091928

ER -

Characteristics of Poly-Si Junctionless FinFETs with HfZrO Using Forming Gas Annealing

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