Characteristics of Pb(Zr0.53Ti0-47)O3 on Metal and Al2O3/Si Substrates

C. L. Sun*, San-Yuan Chen, M. Y. Yang, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We have fabricated Pb(Zr0.53Ti0.47)O3 on Pt and Pb(Zr0.53Ti0.47)O3 on 4 nm Al2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si, the Pb(Zr0.53Ti0.47)O3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of ∼3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si are important for continuous scaling down the ferroelectric memory.

Original languageEnglish
Pages (from-to)F203-F206
Number of pages4
JournalJournal of the Electrochemical Society
Volume148
Issue number11
DOIs
StatePublished - 1 Nov 2001

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