Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Ming Wen Ma*, Chih Yang Chen, Chun Jung Su, Woei Cherng Wu, Yi Hong Wu, Kuo Hsing Kao, Tien-Sheng Chao, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO 2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate the hot carrier degradation behavior for HfO 2 LTPS-TFT. In addition, an abnormal behavior of the I min degradation with different drain bias stress under high-temperature stress condition is also observed and identified in this letter. The degradation of device's performance under high-temperature stress condition can be attributed to the damages of both the HfO 2 gate dielectric and the poly-Si grain boundaries.

Original languageEnglish
Pages (from-to)171-173
Number of pages3
JournalIEEE Electron Device Letters
Issue number2
StatePublished - 1 Feb 2008


  • High-κ
  • Hot carrier stress (HCS)
  • Low-temperature poly-Si thin-film transistors (LTPS-TFTs)
  • Positive bias temperature instability (PBTI)


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