Characteristics of p-type GaN films doped with isoelectronic indium atoms

F. C. Chang; K. C. Shen; H. M. Chung; M. C. Lee; W. H. Chen; Wei-Kuo Chen

Characteristics of p-type GaN films doped with isoelectronic indium atoms

F. C. Chang^*, K. C. Shen, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 10¹⁷ cm^-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

Original language	English
Pages (from-to)	637-643
Number of pages	7
Journal	Chinese Journal of Physics
Volume	40
Issue number	6
State	Published - 1 Dec 2002

Cite this

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title = "Characteristics of p-type GaN films doped with isoelectronic indium atoms",

abstract = "The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.",

author = "Chang, {F. C.} and Shen, {K. C.} and Chung, {H. M.} and Lee, {M. C.} and Chen, {W. H.} and Wei-Kuo Chen",

year = "2002",

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pages = "637--643",

journal = "Chinese Journal of Physics",

issn = "0577-9073",

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T1 - Characteristics of p-type GaN films doped with isoelectronic indium atoms

AU - Chang, F. C.

AU - Shen, K. C.

AU - Chung, H. M.

AU - Lee, M. C.

AU - Chen, W. H.

AU - Chen, Wei-Kuo

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

AB - The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

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M3 - Article

AN - SCOPUS:0036941155

SN - 0577-9073

VL - 40

SP - 637

EP - 643

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 6

ER -

Characteristics of p-type GaN films doped with isoelectronic indium atoms

Abstract

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