TY - GEN
T1 - Characteristics of n-type planar junctionless poly-si thin-film transistors
AU - Lin, C. I.
AU - Lin, Horng-Chih
AU - Huang, T. Y.
PY - 2013
Y1 - 2013
N2 - In this work, we study the electrical characteristics of planar poly- Si junctionless (JL) thin-film transistors (TFTs) with 10 nm-thick channel and various gate width. The output current of JL devices is drastically larger than that of the control device with an undoped channel, owing to the abundant carriers contained in the channel of the JL devices which tends to reduce both channel and source/drain series resistances. Subthreshold swing of the JL devices is found to be larger than the control ones, owing to the existence of a depletion layer in the channel. Nonetheless, excellent on/off current ratio (>107) is achieved, thanks to the use of the ultra-thin channel.
AB - In this work, we study the electrical characteristics of planar poly- Si junctionless (JL) thin-film transistors (TFTs) with 10 nm-thick channel and various gate width. The output current of JL devices is drastically larger than that of the control device with an undoped channel, owing to the abundant carriers contained in the channel of the JL devices which tends to reduce both channel and source/drain series resistances. Subthreshold swing of the JL devices is found to be larger than the control ones, owing to the existence of a depletion layer in the channel. Nonetheless, excellent on/off current ratio (>107) is achieved, thanks to the use of the ultra-thin channel.
UR - http://www.scopus.com/inward/record.url?scp=84885741369&partnerID=8YFLogxK
U2 - 10.1149/05008.0023ecst
DO - 10.1149/05008.0023ecst
M3 - Conference contribution
AN - SCOPUS:84885741369
SN - 9781607683568
T3 - ECS Transactions
SP - 23
EP - 28
BT - Thin Film Transistors 11, TFT 2012
PB - Electrochemical Society Inc.
T2 - 11th Symposium on Thin Film Transistor Technologies, TFT 2012 - PRiME 2012
Y2 - 8 October 2012 through 10 October 2012
ER -