Characteristics of monolithically integrated two-wavelength laser diodes with aluminum-free active layers

Tien-Chang Lu, Richard Fu, H. M. Shieh, K. J. Huang, S. C. Wang

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

A two-wavelength integrated laser diode (TWINLD) with aluminum-free active areas (AAA) has been realized by monolithically combining two different laser material structures in a single chip utilizing the metalorganic chemical vapor deposition growth and regrowth techniques. The single TWINLD chip comprises two ridge wave-guide lasers, one is an InGaP/InGaAIP material structure for a 650 nm red laser, and another is an InGaAsP/AIGaAs material structure with AAA for a 780 nm infrared laser. The chip geometry is 300 μm long and 300 μm wide with a separation of 150 μm between two laser emission spots. The ridge widths are 3.5 and 2 μm for the red and IR laser, respectively, and both lasers emit a single transverse mode with a threshold current of 12 mA for a 650 nm laser and 14 mA for a 780 nm laser under continuous wave operation condition.

Original languageEnglish
Pages (from-to)853-855
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
StatePublished - 12 Feb 2001

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