Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

H. P.D. Yang; C. Lu; R. Hsiao; C. Chiou; C. Lee; C. Huang; Hsin-Chieh Yu; C. Wang; K. Lin; N. A. Maleev; A. R. Kovsh; C. Sung; C. Lai; J. Wang; Jenn-Fang Chen; T. Lee; J. Y. Chi

doi:10.1088/0268-1242/20/8/035

Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

H. P.D. Yang^*, C. Lu, R. Hsiao, C. Chiou, C. Lee, C. Huang, Hsin-Chieh Yu, C. Wang, K. Lin, N. A. Maleev, A. R. Kovsh, C. Sung, C. Lai, J. Wang, Jenn-Fang Chen, T. Lee, J. Y. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 νm range. The epitaxial structures were grown on (1 0 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0-0.02. The long-wavelength (up to 1.3 νm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In_0.36Ga_0.64N_0.006As_0.994/GaAs VCSELs. A very low J_th of 2.55 kA cm^-2 was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 νm In_0.35Ga _0.65N_0.02As_0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A J_th of 1.52 kA cm^-2 has been obtained for the MBE-grown In_0.35Ga _0.65N_0.02As_0.98/GaAs VCSELs, which is the lowest threshold current density reported. The emission characteristics of the InGaNAs/GaAs VCSELs were measured and analysed.

Original language	English
Pages (from-to)	834-839
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	20
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/20/8/035
State	Published - 1 Aug 2005

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@article{5f7d517c6deb489ebcf14ac2069e3317,

title = "Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs",

abstract = "We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 νm range. The epitaxial structures were grown on (1 0 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0-0.02. The long-wavelength (up to 1.3 νm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. A very low Jth of 2.55 kA cm-2 was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 νm In0.35Ga 0.65N0.02As0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A Jth of 1.52 kA cm-2 has been obtained for the MBE-grown In0.35Ga 0.65N0.02As0.98/GaAs VCSELs, which is the lowest threshold current density reported. The emission characteristics of the InGaNAs/GaAs VCSELs were measured and analysed.",

author = "Yang, {H. P.D.} and C. Lu and R. Hsiao and C. Chiou and C. Lee and C. Huang and Hsin-Chieh Yu and C. Wang and K. Lin and Maleev, {N. A.} and Kovsh, {A. R.} and C. Sung and C. Lai and J. Wang and Jenn-Fang Chen and T. Lee and Chi, {J. Y.}",

year = "2005",

month = aug,

day = "1",

doi = "10.1088/0268-1242/20/8/035",

language = "English",

volume = "20",

pages = "834--839",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

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TY - JOUR

T1 - Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

AU - Yang, H. P.D.

AU - Lu, C.

AU - Hsiao, R.

AU - Chiou, C.

AU - Lee, C.

AU - Huang, C.

AU - Yu, Hsin-Chieh

AU - Wang, C.

AU - Lin, K.

AU - Maleev, N. A.

AU - Kovsh, A. R.

AU - Sung, C.

AU - Lai, C.

AU - Wang, J.

AU - Chen, Jenn-Fang

AU - Lee, T.

AU - Chi, J. Y.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 νm range. The epitaxial structures were grown on (1 0 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0-0.02. The long-wavelength (up to 1.3 νm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. A very low Jth of 2.55 kA cm-2 was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 νm In0.35Ga 0.65N0.02As0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A Jth of 1.52 kA cm-2 has been obtained for the MBE-grown In0.35Ga 0.65N0.02As0.98/GaAs VCSELs, which is the lowest threshold current density reported. The emission characteristics of the InGaNAs/GaAs VCSELs were measured and analysed.

AB - We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 νm range. The epitaxial structures were grown on (1 0 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0-0.02. The long-wavelength (up to 1.3 νm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. A very low Jth of 2.55 kA cm-2 was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 νm In0.35Ga 0.65N0.02As0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A Jth of 1.52 kA cm-2 has been obtained for the MBE-grown In0.35Ga 0.65N0.02As0.98/GaAs VCSELs, which is the lowest threshold current density reported. The emission characteristics of the InGaNAs/GaAs VCSELs were measured and analysed.

UR - http://www.scopus.com/inward/record.url?scp=22844440062&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/20/8/035

DO - 10.1088/0268-1242/20/8/035

M3 - Article

AN - SCOPUS:22844440062

SN - 0268-1242

VL - 20

SP - 834

EP - 839

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

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