@inproceedings{8795e838341342ceb47f553da2df5dce,
title = "Characteristics of low-k methyl-silsesquiazane (MSZ) for CMP process using oxygen plasma pretreatment",
abstract = "In this work, the effect of oxygen (O-2) plasma treatment on methylsilesequiazane (MSZ) dielectric was investigated for CMP process. The low-dielectric-constant (low-kappa) MSZ were prepared by spin-on glass (SOG) process. The resultant wafers were followed by O-2-plasma treatment. After O-2-plasma treatment, the CMP process was implemented. Electrical and material analyses were utilized to explore the characteristics of post-CMP MSZ. Experimental results showed that the polish rate of MSZ film with O-2 plasma pre-treatment was increased as much as twice magnitudes than that of the MSZ without O-2-plasma pre-treatment. In addition, the post-CMP MSZ exhibited superior electrical properties. These results clearly indicated the modification surfaces resulted from O-2-plasma treatment facilitated CMP MSZ, and after CMP polishing, the MSZ film still maintained low-k quality.",
keywords = "CHEMICAL-MECHANICAL PLANARIZATION",
author = "Po-Tsun Liu and TC Chang and TM Tsai and ST Yan and YC Chang and H Aoki and TY Tseng",
year = "2003",
month = apr,
language = "English",
isbn = "1-56677-393-8",
series = "Electrochemical Society Series",
publisher = "ELECTROCHEMICAL SOC INC",
pages = "237--243",
editor = "GS Mathad",
booktitle = "THIN FILM MATERIALS, PROCESSES, AND RELIABILITY",
note = "International Symposium on Thin Film Materials, Processes and Reliability ; Conference date: 27-04-2003 Through 02-05-2003",
}