Characteristics of InGa(N)As VCSELs for fiber-optic applications

Hung Pin D. Yang; Chen Ming Lu; Ru Shang Hsiao; Chih Hung Chiou; Cheng Hung Lee; Chun Yuan Huang; Hsin-Chieh Yu; Chin May Wang; Kuen Fong Lin; Chih Ming Lai; Li Chung Wei; Nikolai A. Maleev; Alexey R. Kovsh; Chia Pin Sung; Jyh Shyang Wang; Jenn-Fang Chen; Tsin Dong Lee; Jim Y. Chi

doi:10.1117/12.528157

Characteristics of InGa(N)As VCSELs for fiber-optic applications

Hung Pin D. Yang^*, Chen Ming Lu, Ru Shang Hsiao, Chih Hung Chiou, Cheng Hung Lee, Chun Yuan Huang, Hsin-Chieh Yu, Chin May Wang, Kuen Fong Lin, Chih Ming Lai, Li Chung Wei, Nikolai A. Maleev, Alexey R. Kovsh, Chia Pin Sung, Jyh Shyang Wang, Jenn-Fang Chen, Tsin Dong Lee, Jim Y. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In _0.35Ga_0.64N_0.006As_0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In_0.35Ga_0.65N_0.02As _0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.

Original language	English
Pages (from-to)	158-165
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5364
DOIs	https://doi.org/10.1117/12.528157
State	Published - 2004
Event	Vertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States Duration: 28 Jan 2004 → 29 Jan 2004

Keywords

InGaNAs
Long-wavelength
VCSELs
Vertical-cavity surface-emitting lasers

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10.1117/12.528157

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Yang, H. P. D., Lu, C. M., Hsiao, R. S., Chiou, C. H., Lee, C. H., Huang, C. Y., Yu, H.-C., Wang, C. M., Lin, K. F., Lai, C. M., Wei, L. C., Maleev, N. A., Kovsh, A. R., Sung, C. P., Wang, J. S., Chen, J.-F., Lee, T. D., & Chi, J. Y. (2004). Characteristics of InGa(N)As VCSELs for fiber-optic applications. Proceedings of SPIE - The International Society for Optical Engineering, 5364, 158-165. https://doi.org/10.1117/12.528157

@article{0cff74597def41a99a451c9222780e20,

title = "Characteristics of InGa(N)As VCSELs for fiber-optic applications",

abstract = "We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In 0.35Ga0.64N0.006As0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In0.35Ga0.65N0.02As 0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.",

keywords = "InGaNAs, Long-wavelength, VCSELs, Vertical-cavity surface-emitting lasers",

author = "Yang, {Hung Pin D.} and Lu, {Chen Ming} and Hsiao, {Ru Shang} and Chiou, {Chih Hung} and Lee, {Cheng Hung} and Huang, {Chun Yuan} and Hsin-Chieh Yu and Wang, {Chin May} and Lin, {Kuen Fong} and Lai, {Chih Ming} and Wei, {Li Chung} and Maleev, {Nikolai A.} and Kovsh, {Alexey R.} and Sung, {Chia Pin} and Wang, {Jyh Shyang} and Jenn-Fang Chen and Lee, {Tsin Dong} and Chi, {Jim Y.}",

year = "2004",

doi = "10.1117/12.528157",

language = "English",

volume = "5364",

pages = "158--165",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Vertical-Cavity Surface-Emitting lasers VIII ; Conference date: 28-01-2004 Through 29-01-2004",

}

Yang, HPD, Lu, CM, Hsiao, RS, Chiou, CH, Lee, CH, Huang, CY, Yu, H-C, Wang, CM, Lin, KF, Lai, CM, Wei, LC, Maleev, NA, Kovsh, AR, Sung, CP, Wang, JS, Chen, J-F, Lee, TD & Chi, JY 2004, 'Characteristics of InGa(N)As VCSELs for fiber-optic applications', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5364, pp. 158-165. https://doi.org/10.1117/12.528157

TY - JOUR

T1 - Characteristics of InGa(N)As VCSELs for fiber-optic applications

AU - Yang, Hung Pin D.

AU - Lu, Chen Ming

AU - Hsiao, Ru Shang

AU - Chiou, Chih Hung

AU - Lee, Cheng Hung

AU - Huang, Chun Yuan

AU - Yu, Hsin-Chieh

AU - Wang, Chin May

AU - Lin, Kuen Fong

AU - Lai, Chih Ming

AU - Wei, Li Chung

AU - Maleev, Nikolai A.

AU - Kovsh, Alexey R.

AU - Sung, Chia Pin

AU - Wang, Jyh Shyang

AU - Chen, Jenn-Fang

AU - Lee, Tsin Dong

AU - Chi, Jim Y.

PY - 2004

Y1 - 2004

N2 - We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In 0.35Ga0.64N0.006As0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In0.35Ga0.65N0.02As 0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.

AB - We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In 0.35Ga0.64N0.006As0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In0.35Ga0.65N0.02As 0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.

KW - InGaNAs

KW - Long-wavelength

KW - VCSELs

KW - Vertical-cavity surface-emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=3543057536&partnerID=8YFLogxK

U2 - 10.1117/12.528157

DO - 10.1117/12.528157

M3 - Conference article

AN - SCOPUS:3543057536

SN - 0277-786X

VL - 5364

SP - 158

EP - 165

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Vertical-Cavity Surface-Emitting lasers VIII

Y2 - 28 January 2004 through 29 January 2004

ER -

Characteristics of InGa(N)As VCSELs for fiber-optic applications

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Keywords

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