Characteristics of InGa(N)As VCSELs for fiber-optic applications

Hung Pin D. Yang*, Chen Ming Lu, Ru Shang Hsiao, Chih Hung Chiou, Cheng Hung Lee, Chun Yuan Huang, Hsin-Chieh Yu, Chin May Wang, Kuen Fong Lin, Chih Ming Lai, Li Chung Wei, Nikolai A. Maleev, Alexey R. Kovsh, Chia Pin Sung, Jyh Shyang Wang, Jenn-Fang Chen, Tsin Dong Lee, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In 0.35Ga0.64N0.006As0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In0.35Ga0.65N0.02As 0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.

Original languageEnglish
Pages (from-to)158-165
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2004
EventVertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States
Duration: 28 Jan 200429 Jan 2004


  • InGaNAs
  • Long-wavelength
  • VCSELs
  • Vertical-cavity surface-emitting lasers


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