Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers

Hung Pin D. Yang; I. Chen Hsu; Ya Hsien Chang; Fang I. Lai; Hsin-Chieh Yu; Kuo-Jui Lin; Ru Shang Hsiao; Nikolai A. Maleev; Sergej A. Blokhin; Hao-Chung Kuo; Jim Y. Chi

doi:10.1109/JLT.2008.922172

Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers

Hung Pin D. Yang^*, I. Chen Hsu, Ya Hsien Chang, Fang I. Lai, Hsin-Chieh Yu, Kuo-Jui Lin, Ru Shang Hsiao, Nikolai A. Maleev, Sergej A. Blokhin, Hao-Chung Kuo, Jim Y. Chi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.

Original language	English
Pages (from-to)	1387-1395
Number of pages	9
Journal	Journal of Lightwave Technology
Volume	26
Issue number	11
DOIs	https://doi.org/10.1109/JLT.2008.922172
State	Published - 1 Jun 2008

Keywords

Photonic-crystal (PhC)
Quantum-dot (QD)
Submonolayer (SML)
Vertical-cavity surface-emitting laser (VCSEL)

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10.1109/JLT.2008.922172

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Yang, H. P. D., Hsu, I. C., Chang, Y. H., Lai, F. I., Yu, H.-C., Lin, K.-J., Hsiao, R. S., Maleev, N. A., Blokhin, S. A., Kuo, H.-C., & Chi, J. Y. (2008). Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers. Journal of Lightwave Technology, 26(11), 1387-1395. https://doi.org/10.1109/JLT.2008.922172

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title = "Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers",

abstract = "We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.",

keywords = "Photonic-crystal (PhC), Quantum-dot (QD), Submonolayer (SML), Vertical-cavity surface-emitting laser (VCSEL)",

author = "Yang, {Hung Pin D.} and Hsu, {I. Chen} and Chang, {Ya Hsien} and Lai, {Fang I.} and Hsin-Chieh Yu and Kuo-Jui Lin and Hsiao, {Ru Shang} and Maleev, {Nikolai A.} and Blokhin, {Sergej A.} and Hao-Chung Kuo and Chi, {Jim Y.}",

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doi = "10.1109/JLT.2008.922172",

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T1 - Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers

AU - Yang, Hung Pin D.

AU - Hsu, I. Chen

AU - Chang, Ya Hsien

AU - Lai, Fang I.

AU - Yu, Hsin-Chieh

AU - Lin, Kuo-Jui

AU - Hsiao, Ru Shang

AU - Maleev, Nikolai A.

AU - Blokhin, Sergej A.

AU - Kuo, Hao-Chung

AU - Chi, Jim Y.

PY - 2008/6/1

Y1 - 2008/6/1

N2 - We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.

AB - We have made InGaAs submonolayer (SML) quantum-dot (QD) and InAs QD photonic-crystal vertical-cavity surface-emitting lasers (PhC-VCSELs) for fiber-optic communications in the 990 and 1300 nm ranges, respectively. The active region of the InGaAs SML QD PhC-VCSEL contains three InGaAs SML QD layers, with each of the SML QD layer formed by alternating depositions of InAs (< 1 ML) and GaAs. The active region of the InAs QD PhC-VCSEL contains 17 undoped InAs-InGaAs QD layers. Both types of QD PhC-VCSELs exhibit single-mode characteristics throughout the current range, with side-mode suppression ratio (SMSR) larger than 35 dB. A maximum output power of 5.7 mW has been achieved for the InGaAs SML QD PhC-VCSEL. The near-field image study of the QD PhC-VCSELs indicates that the laser beam is well confined by the photonic-crystal structure of the device.

KW - Photonic-crystal (PhC)

KW - Quantum-dot (QD)

KW - Submonolayer (SML)

KW - Vertical-cavity surface-emitting laser (VCSEL)

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JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

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ER -

Characteristics of InGaAs submonolayer quantum-dot and inAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers

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Keywords

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