Characteristics of HfO 2 /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO 2 gate dielectric and O 2 plasma surface treatment

Ming Wen Ma; Tsung Yu Chiang; Woei Cherng Wu; Tien-Sheng Chao; Tan Fu Lei

doi:10.1109/TED.2008.2006543

Characteristics of HfO ₂ /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO ₂ gate dielectric and O ₂ plasma surface treatment

Ming Wen Ma^*, Tsung Yu Chiang, Woei Cherng Wu, Tien-Sheng Chao, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO ₂ gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO ₂ /poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO ₂ LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO ₂ gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.

Original language	English
Pages (from-to)	3489-3493
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	12
DOIs	https://doi.org/10.1109/TED.2008.2006543
State	Published - 10 Dec 2008

Keywords

3-D integration
High-κ
Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)
Oxygen plasma
System-on-panel (SOP)

Access to Document

10.1109/TED.2008.2006543

Cite this

@article{79a979bd24eb4bc48fe43411453586d1,

title = "Characteristics of HfO 2 /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO 2 gate dielectric and O 2 plasma surface treatment",

abstract = " In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO 2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO 2 /poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO 2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO 2 gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.",

keywords = "3-D integration, High-κ, Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), Oxygen plasma, System-on-panel (SOP)",

author = "Ma, {Ming Wen} and Chiang, {Tsung Yu} and Wu, {Woei Cherng} and Tien-Sheng Chao and Lei, {Tan Fu}",

year = "2008",

month = dec,

day = "10",

doi = "10.1109/TED.2008.2006543",

language = "English",

volume = "55",

pages = "3489--3493",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "12",

}

TY - JOUR

T1 - Characteristics of HfO 2 /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO 2 gate dielectric and O 2 plasma surface treatment

AU - Ma, Ming Wen

AU - Chiang, Tsung Yu

AU - Wu, Woei Cherng

AU - Chao, Tien-Sheng

AU - Lei, Tan Fu

PY - 2008/12/10

Y1 - 2008/12/10

N2 - In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO 2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO 2 /poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO 2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO 2 gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.

AB - In this paper, high-performance complementary-metal-oxide-semiconductor low-temperature polycrystalline-silicon thin-film transistors (CMOS LTPS-TFTs) with HfO 2 gate dielectric are fabricated on one wafer for the first time. Low threshold voltage and excellent subthreshold swing can be achieved simultaneously for N- and P-channel LTPS-TFTs without hydrogenation. In addition, the impacts of the HfO 2 /poly-Si interfacial layer on N- and P-channel LTPS-TFTs are also specified. In order to enhance the characteristics of HfO 2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, thus increasing the carrier mobility and reducing the phonon scattering. The CMOS LTPS-TFTs with HfO 2 gate dielectric and oxygen plasma treatment would be suitable for the application of system-on-panel.

KW - 3-D integration

KW - High-κ

KW - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)

KW - Oxygen plasma

KW - System-on-panel (SOP)

UR - http://www.scopus.com/inward/record.url?scp=57149138864&partnerID=8YFLogxK

U2 - 10.1109/TED.2008.2006543

DO - 10.1109/TED.2008.2006543

M3 - Article

AN - SCOPUS:57149138864

SN - 0018-9383

VL - 55

SP - 3489

EP - 3493

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Characteristics of HfO ₂ /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO ₂ gate dielectric and O ₂ plasma surface treatment

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this