Characteristics of gate-all-around twin poly-Si nanowire thin-film transistors

Jeng-Tzong Sheu; Po Chun Huang; Tzu Shiun Sheu; Chen Chia Chen; Lu An Chen

doi:10.1109/LED.2008.2009956

Characteristics of gate-all-around twin poly-Si nanowire thin-film transistors

Jeng-Tzong Sheu^*
, Po Chun Huang
, Tzu Shiun Sheu
, Chen Chia Chen
, Lu An Chen

^*Corresponding author for this work

Institute of Nonotechnology

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH₃ plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 10⁸), and a virtual absence of drain-induced barrier lowering (13 mV/V).

Original language	American English
Pages (from-to)	139-141
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	2
DOIs	https://doi.org/10.1109/LED.2008.2009956
State	Published - 2009

Keywords

Gate-all-around (GAA)
Nanowire (NW)
Plasma treatment
Short-channel effects (SCEs)
Thin-film transistor (TFT)

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10.1109/LED.2008.2009956

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title = "Characteristics of gate-all-around twin poly-Si nanowire thin-film transistors",

abstract = "We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH3 plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 108), and a virtual absence of drain-induced barrier lowering (13 mV/V).",

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T1 - Characteristics of gate-all-around twin poly-Si nanowire thin-film transistors

AU - Sheu, Jeng-Tzong

AU - Huang, Po Chun

AU - Sheu, Tzu Shiun

AU - Chen, Chen Chia

AU - Chen, Lu An

PY - 2009

Y1 - 2009

N2 - We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH3 plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 108), and a virtual absence of drain-induced barrier lowering (13 mV/V).

AB - We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH3 plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 108), and a virtual absence of drain-induced barrier lowering (13 mV/V).

KW - Gate-all-around (GAA)

KW - Nanowire (NW)

KW - Plasma treatment

KW - Short-channel effects (SCEs)

KW - Thin-film transistor (TFT)

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DO - 10.1109/LED.2008.2009956

M3 - Article

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SN - 0741-3106

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SP - 139

EP - 141

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Characteristics of gate-all-around twin poly-Si nanowire thin-film transistors

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Keywords

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