Characteristics of Ga0.51In0.49P/GaAs heterostructures grown on Si substrates by organometallic epitaxy

Ray-Hua Horng*, D. S. Wuu, K. C. Huang, M. K. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have demonstrated the feasibility of heteroepitaxial growth of Ga 0.51In0.49P/GaAs layers on Si substrates by low-pressure organometallic vapor phase deposition. The growth parameters of the GaAs buffer layer were confirmed to be the controlling factors in obtaining higher quality Ga0.51In0.49P on Si. Under the optimum growth conditions, specular single-crystal Ga0.51In0.49P layers can be reproducibly obtained. The room-temperature electron mobility of the undoped Ga0.51In0.49P epilayer can reach 1000 cm2 /V s with a carrier concentration of 2×1016 cm -3. The efficient photoluminescence indicates that the Ga0.51In0.49P grown layer is of high optical quality. In addition, the GaAs intermediate layer is also effective in reducing the residual tensile stress in the Ga0.51In0.49P film on Si. The results presented can compete with those reported previously for the OMVPE-grown GaxIn1-xP on GaAs substrates.

Original languageEnglish
Pages (from-to)753-756
Number of pages4
JournalJournal of Applied Physics
Volume67
Issue number2
DOIs
StatePublished - 1990

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